Paper Abstract and Keywords |
Presentation |
2010-07-01 11:10
[Invited Talk]
Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport Masumi Saitoh, Yukio Nakabayashi (Toshiba), Ken Uchida (Tokyo Inst. of Tech.), Toshinori Numata (Toshiba) ED2010-79 SDM2010-80 Link to ES Tech. Rep. Archives: ED2010-79 SDM2010-80 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We present the systematic study on the performance of short-channel and strained (100) and (110) n/pMOSFETs. Saturation drain current (Idsat) of short-channel (110) nFETs approaches (100) nFETs as a result of strong velocity saturation in (100) nFETs. Meanwhile, Idsat of short-channel (110) pFETs are still superior to (100) pFETs due to weaker velocity saturation than nFETs. Carrier velocity and Idsat increase by strain is determined not only by low-field mobility enhancement but also by the modulation of saturation velocity (vsat). It is found that vsat increases more by strain in smaller low-field mobility enhancement devices. As a result, velocity enhancement ratio of (100)/(110) n/pFETs converge in sub-30nm regime, because the difference of low-field enhancement ratio is compensated by vsat change. The superiority of (110) CMOS to (100) CMOS is maintained at highly-strained conditions. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
stress / strain / (110) / mobility / on-current / velocity saturation / ballistic / CMOS |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 110, SDM2010-80, pp. 125-129, June 2010. |
Paper # |
SDM2010-80 |
Date of Issue |
2010-06-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2010-79 SDM2010-80 Link to ES Tech. Rep. Archives: ED2010-79 SDM2010-80 |
Conference Information |
Committee |
ED SDM |
Conference Date |
2010-06-30 - 2010-07-02 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Inst. of Tech. Ookayama Campus |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2010-06-ED-SDM |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport |
Sub Title (in English) |
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Keyword(1) |
stress |
Keyword(2) |
strain |
Keyword(3) |
(110) |
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mobility |
Keyword(5) |
on-current |
Keyword(6) |
velocity saturation |
Keyword(7) |
ballistic |
Keyword(8) |
CMOS |
1st Author's Name |
Masumi Saitoh |
1st Author's Affiliation |
Toshiba Corporation (Toshiba) |
2nd Author's Name |
Yukio Nakabayashi |
2nd Author's Affiliation |
Toshiba Corporation (Toshiba) |
3rd Author's Name |
Ken Uchida |
3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
4th Author's Name |
Toshinori Numata |
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Toshiba Corporation (Toshiba) |
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Speaker |
Author-1 |
Date Time |
2010-07-01 11:10:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
ED2010-79, SDM2010-80 |
Volume (vol) |
vol.110 |
Number (no) |
no.109(ED), no.110(SDM) |
Page |
pp.125-129 |
#Pages |
5 |
Date of Issue |
2010-06-23 (ED, SDM) |
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