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| Presentation | 2010-07-02 10:10 [Invited Talk] InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD Makoto Miyoshi, Shigeaki Sumiya, Mikiya Ichimura, Tomohiko Sugiyama, Sota Maehara, Mitsuhiro Tanaka (NGK), Takashi Egawa (Nagoya Inst. of Tech.)  ED2010-105 SDM2010-106 Link to ES Tech. Rep. Archives: ED2010-105 SDM2010-106 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Lattice-matched In0.18Al0.82N/GaN HEMT structures were grown on 4-inch-diameter silicon substrates by MOCVD. The samples showed a good in-wafer uniformity of alloy composition, layer thicknesses, and 2DEG properties. A 2DEG density of higher than 2.5 × 1013/cm2 and a low sheet resistance of approximately 250 Ω/sq were achieved for the MOCVD epiwafers. The breakdown voltage of samples was also confirmed to be higher than 600 V for a sample with a total film thickness of 3 μm. HEMTs were successfully fabricated using the MOCVD epiwafers and exhibited good pinch-off characteristics. The maximum source–drain current density and the maximum extrinsic transconductance were measured to be approximately 0.7A/mm and 250 mS/mm, respectively, for 1.5-μm-gate-length HEMTs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HEMT / InAlN/GaN / MOCVD / 4-in Silicon / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 109, ED2010-105, pp. 241-244, June 2010. | |
| Paper # | ED2010-105 | |
| Date of Issue | 2010-06-23 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-105 SDM2010-106 Link to ES Tech. Rep. Archives: ED2010-105 SDM2010-106 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-06-30 - 2010-07-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Inst. of Tech. Ookayama Campus |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-06-ED-SDM |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD |
| Sub Title (in English) | |
| Keyword(1) | HEMT |
| Keyword(2) | InAlN/GaN |
| Keyword(3) | MOCVD |
| Keyword(4) | 4-in Silicon |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Makoto Miyoshi |
| 1st Author's Affiliation | NGK Insulators, LTD. (NGK) |
| 2nd Author's Name | Shigeaki Sumiya |
| 2nd Author's Affiliation | NGK Insulators, LTD. (NGK) |
| 3rd Author's Name | Mikiya Ichimura |
| 3rd Author's Affiliation | NGK Insulators, LTD. (NGK) |
| 4th Author's Name | Tomohiko Sugiyama |
| 4th Author's Affiliation | NGK Insulators, LTD. (NGK) |
| 5th Author's Name | Sota Maehara |
| 5th Author's Affiliation | NGK Insulators, LTD. (NGK) |
| 6th Author's Name | Mitsuhiro Tanaka |
| 6th Author's Affiliation | NGK Insulators, LTD. (NGK) |
| 7th Author's Name | Takashi Egawa |
| 7th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2010-07-02 10:10:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2010-105, SDM2010-106 |
| Volume (vol) | vol.110 |
| Number (no) | no.109(ED), no.110(SDM) |
| Page | pp.241-244 |
| #Pages | 4 |
| Date of Issue | 2010-06-23 (ED, SDM) |
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