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| Presentation | 2010-07-02 12:50 Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells Tetsuo Endoh, Yasuhiko Suzuki, Takuya Imamoto, Hyoungjun Na (Tohoku Univ.)  ED2010-114 SDM2010-115 Link to ES Tech. Rep. Archives: ED2010-114 SDM2010-115 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, a new 2 step program method is proposed to realize high speed and low power program operation for novel nonvolatile memory cells. Moreover, over 1GHz high-speed current pulse generation circuit is proposed which is capable of realizing the proposed 2 step program method. The operation of designed over 1GHz high-speed current pulse generation circuit with 90 nm CMOS process is investigated by HSPICE simulations. The proposed 2 step program method and the designed over 1GHz high-speed current pulse generation circuit with 90 nm CMOS process can be applied to all the novel nonvolatile memories on which the program operation is performed by injecting current, such as PRAM, RRAM, MRAM, STTRAM, and etc. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Current Pulse Generator / Nonvolatile Memory / STTRAM / MTJ / Drive Current Control / Pulse Width Control / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 110, SDM2010-115, pp. 283-288, June 2010. | |
| Paper # | SDM2010-115 | |
| Date of Issue | 2010-06-23 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-114 SDM2010-115 Link to ES Tech. Rep. Archives: ED2010-114 SDM2010-115 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-06-30 - 2010-07-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Inst. of Tech. Ookayama Campus |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-06-ED-SDM |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells |
| Sub Title (in English) | |
| Keyword(1) | Current Pulse Generator |
| Keyword(2) | Nonvolatile Memory |
| Keyword(3) | STTRAM |
| Keyword(4) | MTJ |
| Keyword(5) | Drive Current Control |
| Keyword(6) | Pulse Width Control |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tetsuo Endoh |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Yasuhiko Suzuki |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Takuya Imamoto |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Hyoungjun Na |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-07-02 12:50:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2010-114, SDM2010-115 |
| Volume (vol) | vol.110 |
| Number (no) | no.109(ED), no.110(SDM) |
| Page | pp.283-288 |
| #Pages | 6 |
| Date of Issue | 2010-06-23 (ED, SDM) |
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