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Paper Abstract and Keywords
Presentation 2010-07-02 10:50
Characterization of deep electron levels of AlGaN grown by MOVPE
Kimihito Ooyama (Hokkaido Univ./SMM), Katsuya Sugawara (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2010-107 SDM2010-108 Link to ES Tech. Rep. Archives: ED2010-107 SDM2010-108
Abstract (in Japanese) (See Japanese page) 
(in English) Deep electronic levels of Al_xGa_{1-x}N (0.25 <x < 0.60) were investigated by using deep level transient spectroscopy (DLTS) and photocapacitance methods. Si-doped AlGaN layers were grown on AlN/sapphire template by metal-organic chemical vapor deposition. DLTS analysis using a sampling time window up to 100 s showed two dominant deep levels with activation energies (\DeltaE) larger than 1.0 eV in Al_xGa_{1-x}N with x= 0.25 and 0.37. The densities of these levels were larger than 1 x 10^16 cm^{-3}. For the Al_{0.60}Ga_{0.40}N sample, the deeper levels (\DeltaE > 1.5 eV) were detected by the photocapacitance measurement. The origin of the dominant deep level in AlGaN is related to defect complex including anti-site defects and divacancies.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN / Schottky barrier / Deep level / DLTS / Photo-capacitance / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 109, ED2010-107, pp. 249-252, June 2010.
Paper # ED2010-107 
Date of Issue 2010-06-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-107 SDM2010-108 Link to ES Tech. Rep. Archives: ED2010-107 SDM2010-108

Conference Information
Committee ED SDM  
Conference Date 2010-06-30 - 2010-07-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Inst. of Tech. Ookayama Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2010-06-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of deep electron levels of AlGaN grown by MOVPE 
Sub Title (in English)  
Keyword(1) AlGaN  
Keyword(2) Schottky barrier  
Keyword(3) Deep level  
Keyword(4) DLTS  
Keyword(5) Photo-capacitance  
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1st Author's Name Kimihito Ooyama  
1st Author's Affiliation Hokkaido University/Sumitomo metal minig (Hokkaido Univ./SMM)
2nd Author's Name Katsuya Sugawara  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Hiroyuki Taketomi  
3rd Author's Affiliation Mie University (Mie Univ.)
4th Author's Name Hideto Miyake  
4th Author's Affiliation Mie University (Mie Univ.)
5th Author's Name Kazumasa Hiramatsu  
5th Author's Affiliation Mie University (Mie Univ.)
6th Author's Name Tamotsu Hashizume  
6th Author's Affiliation Hokkaido University/JST-CREST (Hokkaido Univ./JST)
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Speaker Author-1 
Date Time 2010-07-02 10:50:00 
Presentation Time 15 minutes 
Registration for ED 
Paper # ED2010-107, SDM2010-108 
Volume (vol) vol.110 
Number (no) no.109(ED), no.110(SDM) 
Page pp.249-252 
#Pages
Date of Issue 2010-06-23 (ED, SDM) 


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