Paper Abstract and Keywords |
Presentation |
2010-07-02 10:50
Characterization of deep electron levels of AlGaN grown by MOVPE Kimihito Ooyama (Hokkaido Univ./SMM), Katsuya Sugawara (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2010-107 SDM2010-108 Link to ES Tech. Rep. Archives: ED2010-107 SDM2010-108 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Deep electronic levels of Al_xGa_{1-x}N (0.25 <x < 0.60) were investigated by using deep level transient spectroscopy (DLTS) and photocapacitance methods. Si-doped AlGaN layers were grown on AlN/sapphire template by metal-organic chemical vapor deposition. DLTS analysis using a sampling time window up to 100 s showed two dominant deep levels with activation energies (\DeltaE) larger than 1.0 eV in Al_xGa_{1-x}N with x= 0.25 and 0.37. The densities of these levels were larger than 1 x 10^16 cm^{-3}. For the Al_{0.60}Ga_{0.40}N sample, the deeper levels (\DeltaE > 1.5 eV) were detected by the photocapacitance measurement. The origin of the dominant deep level in AlGaN is related to defect complex including anti-site defects and divacancies. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN / Schottky barrier / Deep level / DLTS / Photo-capacitance / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 109, ED2010-107, pp. 249-252, June 2010. |
Paper # |
ED2010-107 |
Date of Issue |
2010-06-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2010-107 SDM2010-108 Link to ES Tech. Rep. Archives: ED2010-107 SDM2010-108 |
Conference Information |
Committee |
ED SDM |
Conference Date |
2010-06-30 - 2010-07-02 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Inst. of Tech. Ookayama Campus |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2010-06-ED-SDM |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Characterization of deep electron levels of AlGaN grown by MOVPE |
Sub Title (in English) |
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Keyword(1) |
AlGaN |
Keyword(2) |
Schottky barrier |
Keyword(3) |
Deep level |
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DLTS |
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Photo-capacitance |
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1st Author's Name |
Kimihito Ooyama |
1st Author's Affiliation |
Hokkaido University/Sumitomo metal minig (Hokkaido Univ./SMM) |
2nd Author's Name |
Katsuya Sugawara |
2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
3rd Author's Name |
Hiroyuki Taketomi |
3rd Author's Affiliation |
Mie University (Mie Univ.) |
4th Author's Name |
Hideto Miyake |
4th Author's Affiliation |
Mie University (Mie Univ.) |
5th Author's Name |
Kazumasa Hiramatsu |
5th Author's Affiliation |
Mie University (Mie Univ.) |
6th Author's Name |
Tamotsu Hashizume |
6th Author's Affiliation |
Hokkaido University/JST-CREST (Hokkaido Univ./JST) |
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Speaker |
Author-1 |
Date Time |
2010-07-02 10:50:00 |
Presentation Time |
15 minutes |
Registration for |
ED |
Paper # |
ED2010-107, SDM2010-108 |
Volume (vol) |
vol.110 |
Number (no) |
no.109(ED), no.110(SDM) |
Page |
pp.249-252 |
#Pages |
4 |
Date of Issue |
2010-06-23 (ED, SDM) |
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