Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2010-07-02 10:00
Acivation behaviour for doped Si films after laser or furnace annealing
Takashi Noguchi, Toshiharu Suzuki (Univ. of Ryukyus) ED2010-85 SDM2010-86
Abstract (in Japanese) (See Japanese page) 
(in English) After excimer laser annealing (ELA) for heavily boron- or phosphorous-doped Si films, the relation between the conductivity and the crystallinity was studied compared with the result after furnace annealing (FA). The sheet resistance decreased with improving the crystallinity of the films. By optimizing the laser annealing condition, the Si films of 50 nm thickness show extremely low sheet resistance below 90 ohm/□ for phosphorus dose of 2e15 cm-2 and for boron dose of 5e15 cm-2. The effective activation rate for the doped Si film after ELA is comparable to the result for bulk single-crystalline Si under thermal equilibrium condition. ELA activation subsequently after heavily ion implantation is more effective than FA and is expected to source and drain or Si gate in CMOS TFTs as well as an electrode for pin sensor diode and for solar cell as a System on Panel (SoP) application.
Keyword (in Japanese) (See Japanese page) 
(in English) polysilicon film / crystallization / laser annealing / sheet resistance / electrical activation / mobility / grain boundary / thin film transistor  
Reference Info. IEICE Tech. Rep., vol. 110, no. 110, SDM2010-86, pp. 149-153, June 2010.
Paper # SDM2010-86 
Date of Issue 2010-06-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-85 SDM2010-86

Conference Information
Committee ED SDM  
Conference Date 2010-06-30 - 2010-07-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Inst. of Tech. Ookayama Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2010-06-ED-SDM 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Acivation behaviour for doped Si films after laser or furnace annealing 
Sub Title (in English)  
Keyword(1) polysilicon film  
Keyword(2) crystallization  
Keyword(3) laser annealing  
Keyword(4) sheet resistance  
Keyword(5) electrical activation  
Keyword(6) mobility  
Keyword(7) grain boundary  
Keyword(8) thin film transistor  
1st Author's Name Takashi Noguchi  
1st Author's Affiliation University of the Ryukyus (Univ. of Ryukyus)
2nd Author's Name Toshiharu Suzuki  
2nd Author's Affiliation University of the Ryukyus (Univ. of Ryukyus)
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-2 
Date Time 2010-07-02 10:00:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2010-85, SDM2010-86 
Volume (vol) vol.110 
Number (no) no.109(ED), no.110(SDM) 
Page pp.149-153 
#Pages 5 
Date of Issue 2010-06-23 (ED, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan