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| Presentation | 2010-07-02 12:00 The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh (Tohoku Univ.)  ED2010-92 SDM2010-93 Link to ES Tech. Rep. Archives: ED2010-92 SDM2010-93 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials have attracted considerable attention. We investigated the dependence of threshold voltage (Vth) characteristics of the High-k/Metal Gate MOSFET on the temperature, in comparison to conventional SiON/Poly-Si Gate MOSFET. Two aspects including the Fermi level and the channel mobility in MOSFET are discussed in details. Furthermore, the influence of threshold voltage characteristics of the High-k/Metal Gate MOSFET on the logic threshold voltage (Vth-inv) of CMOS inverter is reported in this paper. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | High-k dielectric film / High-k/Metal Gate Stack / Mobility / CMOS / Inverter / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 110, SDM2010-93, pp. 177-182, June 2010. | |
| Paper # | SDM2010-93 | |
| Date of Issue | 2010-06-23 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-92 SDM2010-93 Link to ES Tech. Rep. Archives: ED2010-92 SDM2010-93 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-06-30 - 2010-07-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Inst. of Tech. Ookayama Campus |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-06-ED-SDM |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter |
| Sub Title (in English) | |
| Keyword(1) | High-k dielectric film |
| Keyword(2) | High-k/Metal Gate Stack |
| Keyword(3) | Mobility |
| Keyword(4) | CMOS |
| Keyword(5) | Inverter |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takeshi Sasaki |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Takuya Imamoto |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Tetsuo Endoh |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-07-02 12:00:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2010-92, SDM2010-93 |
| Volume (vol) | vol.110 |
| Number (no) | no.109(ED), no.110(SDM) |
| Page | pp.177-182 |
| #Pages | 6 |
| Date of Issue | 2010-06-23 (ED, SDM) |
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