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Paper Abstract and Keywords
Presentation 2010-07-02 12:45
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET
Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh (Tohoku Univ.) ED2010-95 SDM2010-96
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, we compare the 1/f noise characteristics of High-k/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET by measurement, and evaluate the time fluctuation of drive current. Specifically, we focus on the statistical distribution of the time fluctuations of drive current of High-k/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET. We have found new phenomena in the 1/f noise characteristics of SiON/Poly-Si Gate MOSFET in comparison with High-k/Metal Gate MOSFET. In the case of SiON/Poly-Si Gate MOSFET, as the gate width is narrowed, Power Spectrum Density (PSD) depends on 1/f2 that is the slope. Moreover, as the gate width is widened, PSD depends on 1/f and the value of PSD shifts lower. On the other hand, in the case of High-k/Metal Gate MOSFET, the value of PSD is much larger than that of SiON/Poly-Si Gate MOSFET. Moreover, there is no dependency of PSD on gate width. This result is a useful knowledge for future High-k/Metal Gate MOSFETs.
Keyword (in Japanese) (See Japanese page) 
(in English) 1/f noise / MOSFET / High-k / Random Telegraph Signal (RTS) / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 110, SDM2010-96, pp. 195-198, June 2010.
Paper # SDM2010-96 
Date of Issue 2010-06-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-95 SDM2010-96

Conference Information
Committee ED SDM  
Conference Date 2010-06-30 - 2010-07-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Inst. of Tech. Ookayama Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2010-06-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET 
Sub Title (in English)  
Keyword(1) 1/f noise  
Keyword(2) MOSFET  
Keyword(3) High-k  
Keyword(4) Random Telegraph Signal (RTS)  
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1st Author's Name Takuya Imamoto  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Takeshi Sasaki  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Tetsuo Endoh  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2010-07-02 12:45:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2010-95, SDM2010-96 
Volume (vol) vol.110 
Number (no) no.109(ED), no.110(SDM) 
Page pp.195-198 
#Pages 4 
Date of Issue 2010-06-23 (ED, SDM) 

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