Paper Abstract and Keywords |
Presentation |
2010-07-02 12:45
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh (Tohoku Univ.) ED2010-95 SDM2010-96 Link to ES Tech. Rep. Archives: ED2010-95 SDM2010-96 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, we compare the 1/f noise characteristics of High-k/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET by measurement, and evaluate the time fluctuation of drive current. Specifically, we focus on the statistical distribution of the time fluctuations of drive current of High-k/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET. We have found new phenomena in the 1/f noise characteristics of SiON/Poly-Si Gate MOSFET in comparison with High-k/Metal Gate MOSFET. In the case of SiON/Poly-Si Gate MOSFET, as the gate width is narrowed, Power Spectrum Density (PSD) depends on 1/f2 that is the slope. Moreover, as the gate width is widened, PSD depends on 1/f and the value of PSD shifts lower. On the other hand, in the case of High-k/Metal Gate MOSFET, the value of PSD is much larger than that of SiON/Poly-Si Gate MOSFET. Moreover, there is no dependency of PSD on gate width. This result is a useful knowledge for future High-k/Metal Gate MOSFETs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
1/f noise / MOSFET / High-k / Random Telegraph Signal (RTS) / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 110, SDM2010-96, pp. 195-198, June 2010. |
Paper # |
SDM2010-96 |
Date of Issue |
2010-06-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2010-95 SDM2010-96 Link to ES Tech. Rep. Archives: ED2010-95 SDM2010-96 |
Conference Information |
Committee |
ED SDM |
Conference Date |
2010-06-30 - 2010-07-02 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Inst. of Tech. Ookayama Campus |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2010-06-ED-SDM |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET |
Sub Title (in English) |
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Keyword(1) |
1/f noise |
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MOSFET |
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High-k |
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Random Telegraph Signal (RTS) |
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1st Author's Name |
Takuya Imamoto |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Takeshi Sasaki |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Tetsuo Endoh |
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Tohoku University (Tohoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2010-07-02 12:45:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
ED2010-95, SDM2010-96 |
Volume (vol) |
vol.110 |
Number (no) |
no.109(ED), no.110(SDM) |
Page |
pp.195-198 |
#Pages |
4 |
Date of Issue |
2010-06-23 (ED, SDM) |
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