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Paper Abstract and Keywords
Presentation 2010-07-30 10:20
Formation of AlN films on Si substrate by Pulsed Laser Deposition
Hideki Nakazawa, Daiki Suzuki, Ryoichi Osozawa, Hiroshi Okamoto (Hirosaki Univ.) CPM2010-38
Abstract (in Japanese) (See Japanese page) 
(in English) We have grown aluminum nitride (AlN) films on Si substrate by pulsed laser deposition using KrF excimer laser and an AlN target, and investigated the crystallinity and surface morphology of the grown films. The crystallinity of the films was evaluated by reflection high-energy electron diffraction, X-ray diffraction, Fourier-transform infrared spectroscopy, and X-ray photoelectron spectroscopy. The surface morphology of the films was observed by atomic force microscopy and scanning electron microscopy. We found that the growth must be conducted within a certain temperature region at a given N_2 pressure to obtain a high-quality singlecrystalline AlN film. We also noted that the optimum temperature was an increasing function of N_2 pressure. Although single-crystalline films were grown at a temperature below 500 °C, the film with the best crystallinity was obtained at 700 °C and 1 Pa in this study. The root-mean-square roughness of the best film was 0.35 nm. The results can be qualitatively explained in terms of the nitrogen desorption from the growing surfaces and the surface migration of adatoms.
Keyword (in Japanese) (See Japanese page) 
(in English) aluminum nitride / pulsed laser deposition / silicon / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 154, CPM2010-38, pp. 39-44, July 2010.
Paper # CPM2010-38 
Date of Issue 2010-07-22 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2010-07-29 - 2010-07-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Michino-Eki Shari Meeting Room 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2010-07-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of AlN films on Si substrate by Pulsed Laser Deposition 
Sub Title (in English)  
Keyword(1) aluminum nitride  
Keyword(2) pulsed laser deposition  
Keyword(3) silicon  
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1st Author's Name Hideki Nakazawa  
1st Author's Affiliation Hirosaki University (Hirosaki Univ.)
2nd Author's Name Daiki Suzuki  
2nd Author's Affiliation Hirosaki University (Hirosaki Univ.)
3rd Author's Name Ryoichi Osozawa  
3rd Author's Affiliation Hirosaki University (Hirosaki Univ.)
4th Author's Name Hiroshi Okamoto  
4th Author's Affiliation Hirosaki University (Hirosaki Univ.)
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Speaker Author-1 
Date Time 2010-07-30 10:20:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2010-38 
Volume (vol) vol.110 
Number (no) no.154 
Page pp.39-44 
#Pages 6 
Date of Issue 2010-07-22 (CPM) 

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