Paper Abstract and Keywords |
Presentation |
2010-08-27 16:25
On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs Yongxun Liu, Kazuhiko Endo, Shinich Ouchi (AIST), Takahiro Kamei (Meiji Univ.), Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa (AIST), Tetsuro Hayashida (Meiji Univ.), Kunihiro Sakamoto, Takashi Matsukawa (AIST), Atsushi Ogura (Meiji Univ.), Meishoku Masahara (AIST) SDM2010-151 ICD2010-66 Link to ES Tech. Rep. Archives: SDM2010-151 ICD2010-66 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The threshold voltage (Vt) variability in scaled FinFETs with gate length down to 20 nm was systematically investigated. It was found that the atomically flat Si-fin sidewall channels fabricated by using the orientation dependent wet etching are very effective to reduce the gate-stack origin Vt variations (VTV). By investigating the gate oxide thickness (Tox) dependence of VTV, the gate-stack origin, i.e., work function variation (WFV) and gate oxide charge (Qox) variation (OCV) origin VTV were successfully separated. Moreover, it was experimentally found that the Vt of the scaled P-channel PVD-TiN gate multi-FinFETs with the same gate area reduces with increasing the number of fins.
Keyword FinFET,Threshold Voltage, Variability |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
FinFET / Threshold Voltage / Variability / Gate work function / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 182, SDM2010-151, pp. 149-154, Aug. 2010. |
Paper # |
SDM2010-151 |
Date of Issue |
2010-08-19 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2010-151 ICD2010-66 Link to ES Tech. Rep. Archives: SDM2010-151 ICD2010-66 |
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