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Paper Abstract and Keywords
Presentation 2010-08-27 16:55
1.3um InAs/GaAs Quantum Dot Lasers on Si Substrates by Wafer Bonding
Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko Arakawa (Univ. of Tokyo.) EMD2010-59 CPM2010-75 OPE2010-84 LQE2010-57
Abstract (in Japanese) (See Japanese page) 
(in English) III-V semiconductor compounds light sources monolithically formed on Si substrates or waveguides would be promising for realization of photonic-electronic integrated circuits. Quantum dot (QD) lasers particularly has low lasing threshold current densities and high thermal stability Specifically quantum dot (QD) lasers yield low lasing threshold current and high temperature stability and therefore are suitable for high-density integration. We report the first demonstration of an electrically pumped QD laser on a Si substrate fabricated by wafer bonding. Our device has achieved RT lasing at 1.3 um (> 1.0 um) O-band for the first time as an electrically pumped QD laser on Si. Its lasing threshold current density was 360 A/cm2, the lowest out of QD lasers on Si.
Keyword (in Japanese) (See Japanese page) 
(in English) Quantum dot / Laser / Silicon photonics / Wafer bonding / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 181, LQE2010-57, pp. 153-156, Aug. 2010.
Paper # LQE2010-57 
Date of Issue 2010-08-19 (EMD, CPM, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EMD2010-59 CPM2010-75 OPE2010-84 LQE2010-57

Conference Information
Committee EMD OPE LQE CPM  
Conference Date 2010-08-26 - 2010-08-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Chitose Arcadia Plaza 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2010-08-EMD-OPE-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 1.3um InAs/GaAs Quantum Dot Lasers on Si Substrates by Wafer Bonding 
Sub Title (in English)  
Keyword(1) Quantum dot  
Keyword(2) Laser  
Keyword(3) Silicon photonics  
Keyword(4) Wafer bonding  
Keyword(5)  
Keyword(6)  
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1st Author's Name Katsuaki Tanabe  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo.)
2nd Author's Name Denis Guimard  
2nd Author's Affiliation University of Tokyo (Univ. of Tokyo.)
3rd Author's Name Damien Bordel  
3rd Author's Affiliation University of Tokyo (Univ. of Tokyo.)
4th Author's Name Satoshi Iwamoto  
4th Author's Affiliation University of Tokyo (Univ. of Tokyo.)
5th Author's Name Yasuhiko Arakawa  
5th Author's Affiliation University of Tokyo (Univ. of Tokyo.)
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Speaker Author-1 
Date Time 2010-08-27 16:55:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # EMD2010-59, CPM2010-75, OPE2010-84, LQE2010-57 
Volume (vol) vol.110 
Number (no) no.178(EMD), no.179(CPM), no.180(OPE), no.181(LQE) 
Page pp.153-156 
#Pages 4 
Date of Issue 2010-08-19 (EMD, CPM, OPE, LQE) 

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