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Paper Abstract and Keywords
Presentation 2010-08-27 16:00
Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65
Abstract (in Japanese) (See Japanese page) 
(in English) It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH and transconductance Gm. Device-matrix-array (DMA) TEG with 8k transistors fabricated by the 65nm technology is measured. Moreover, it is found by 3D device simulation and measured data that “current-onset voltage” variability is mainly determined by the channel potential fluctuates by random dopant fluctuations (RDF).
Keyword (in Japanese) (See Japanese page) 
(in English) drain current variability / MOSFET / threshold voltage / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 182, SDM2010-150, pp. 143-148, Aug. 2010.
Paper # SDM2010-150 
Date of Issue 2010-08-19 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-150 ICD2010-65

Conference Information
Committee ICD SDM  
Conference Date 2010-08-26 - 2010-08-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Sapporo Center for Gender Equality 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2010-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs 
Sub Title (in English)  
Keyword(1) drain current variability  
Keyword(2) MOSFET  
Keyword(3) threshold voltage  
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1st Author's Name Tomoko Mizutani  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Takaaki Tsunomura  
2nd Author's Affiliation MIRAI-Selete (MIRAI-Selete)
3rd Author's Name Anil Kumar  
3rd Author's Affiliation University of Tokyo (Univ. of Tokyo)
4th Author's Name Akio Nishida  
4th Author's Affiliation MIRAI-Selete (MIRAI-Selete)
5th Author's Name Kiyoshi Takeuchi  
5th Author's Affiliation MIRAI-Selete (MIRAI-Selete)
6th Author's Name Satoshi Inaba  
6th Author's Affiliation MIRAI-Selete (MIRAI-Selete)
7th Author's Name Shiro Kamohara  
7th Author's Affiliation MIRAI-Selete (MIRAI-Selete)
8th Author's Name Kazuo Terada  
8th Author's Affiliation Hiroshima City University (Hiroshima City Univ.)
9th Author's Name Tohru Mogami  
9th Author's Affiliation MIRAI-Selete (MIRAI-Selete)
10th Author's Name Toshiro Hiramoto  
10th Author's Affiliation University of Tokyo/MIRAI-Selete (Univ. of Tokyo/MIRAI-Selete)
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Speaker Author-1 
Date Time 2010-08-27 16:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2010-150, ICD2010-65 
Volume (vol) vol.110 
Number (no) no.182(SDM), no.183(ICD) 
Page pp.143-148 
#Pages 6 
Date of Issue 2010-08-19 (SDM, ICD) 

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