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Paper Abstract and Keywords
Presentation 2010-09-30 10:50
c-axis parallel oriented ZnO film depositions by RF bias sputtering -- The effect of bias frequency on the orientation --
Shinji Takayanagi (Doshisha Univ.), Takahiko Yanagitani (Nagoya Inst. Tech.), Mami Matsukawa, Yoshiaki Watanabe (Doshisha Univ.) US2010-62
Abstract (in Japanese) (See Japanese page) 
(in English) ZnO films where the crystallite c-axis is unidirectionally-aligned and parallel to the substrate plane [(11-20) or (10-20) textured films] are good candidates for shear mode devices. They are suitable for the sensors to measure mass loading in the liquid. Ion bombardment to the substrate during film deposition suppresses the (0001)-oriented grain growth, resulting in the preferential development of (11-20) or (10-10) textures instead of the (0001) texture. This is because the most densely packed (0001) plane should incur more damage by ion bombardment than the (11-20) and (10-10) planes. In this study, we propose RF substrate bias RF magnetron sputtering method to induce the ion bombardment to the substrate. We successfully fabricated (11-20) or (10-10) ZnO films using this method in the conditions where these textures could not be formed without substrate bias.
Keyword (in Japanese) (See Japanese page) 
(in English) c-axis parallel oriented ZnO film / RF bias sputtering / shear mode devices / RF magnetron sputtering method / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 213, US2010-62, pp. 75-80, Sept. 2010.
Paper # US2010-62 
Date of Issue 2010-09-22 (US) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF US2010-62

Conference Information
Committee US  
Conference Date 2010-09-29 - 2010-09-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) General 
Paper Information
Registration To US 
Conference Code 2010-09-US 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) c-axis parallel oriented ZnO film depositions by RF bias sputtering 
Sub Title (in English) The effect of bias frequency on the orientation 
Keyword(1) c-axis parallel oriented ZnO film  
Keyword(2) RF bias sputtering  
Keyword(3) shear mode devices  
Keyword(4) RF magnetron sputtering method  
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1st Author's Name Shinji Takayanagi  
1st Author's Affiliation Doshisha University (Doshisha Univ.)
2nd Author's Name Takahiko Yanagitani  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. Tech.)
3rd Author's Name Mami Matsukawa  
3rd Author's Affiliation Doshisha University (Doshisha Univ.)
4th Author's Name Yoshiaki Watanabe  
4th Author's Affiliation Doshisha University (Doshisha Univ.)
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Speaker Author-1 
Date Time 2010-09-30 10:50:00 
Presentation Time 25 minutes 
Registration for US 
Paper # US2010-62 
Volume (vol) vol.110 
Number (no) no.213 
Page pp.75-80 
#Pages 6 
Date of Issue 2010-09-22 (US) 

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