| Paper Abstract and Keywords |
| Presentation |
2010-09-30 11:40
Fabrication of Film Bulk Acoustic Resonator Using Structure of Ta2O5 Thin Film/Si Substrate Akinori Tsuchiya, Shoji Kakio (Yamanashi Univ.), Yasuhiko Nakagawa (Prof. Emeritus, Yamanashi Univ.) US2010-64 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Highly X-axis-oriented tantalum pentoxide (Ta2O5) piezoelectric thin films were deposited using an RF-magnetron sputtering system with a metal tantalum target and an O2-radical source. The degree of orientation, the Rayleigh-type surface acoustic wave properties, surface roughness and composition ratio were evaluated on SiO2 substrate. Moreover, an FBAR using Ta2O5 thin film/Si substrate structure was fabricated and the resonant characteristic was evaluated. When the substrate temperature was higher than 700˚C, the plane spacing equal to the unit cell and relatively large piezoelectricity were measured. When the film thickness was 1.4 μm, the resonant characteristic was observed at 1.7 GHz for the fabrication of FBAR. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Piezoelectric thin film / Tantalum pentoxide / Orientation, / Surface acoustic wave / Coupling factor / FBAR / / |
| Reference Info. |
IEICE Tech. Rep., vol. 110, no. 213, US2010-64, pp. 87-92, Sept. 2010. |
| Paper # |
US2010-64 |
| Date of Issue |
2010-09-22 (US) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
US2010-64 |
| Conference Information |
| Committee |
US |
| Conference Date |
2010-09-29 - 2010-09-30 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Tohoku Univ. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
General |
| Paper Information |
| Registration To |
US |
| Conference Code |
2010-09-US |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Fabrication of Film Bulk Acoustic Resonator Using Structure of Ta2O5 Thin Film/Si Substrate |
| Sub Title (in English) |
|
| Keyword(1) |
Piezoelectric thin film |
| Keyword(2) |
Tantalum pentoxide |
| Keyword(3) |
Orientation, |
| Keyword(4) |
Surface acoustic wave |
| Keyword(5) |
Coupling factor |
| Keyword(6) |
FBAR |
| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Akinori Tsuchiya |
| 1st Author's Affiliation |
University of Yamanashi (Yamanashi Univ.) |
| 2nd Author's Name |
Shoji Kakio |
| 2nd Author's Affiliation |
University of Yamanashi (Yamanashi Univ.) |
| 3rd Author's Name |
Yasuhiko Nakagawa |
| 3rd Author's Affiliation |
Professor Emeritus, University of Yamanashi (Prof. Emeritus, Yamanashi Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2010-09-30 11:40:00 |
| Presentation Time |
25 minutes |
| Registration for |
US |
| Paper # |
US2010-64 |
| Volume (vol) |
vol.110 |
| Number (no) |
no.213 |
| Page |
pp.87-92 |
| #Pages |
6 |
| Date of Issue |
2010-09-22 (US) |