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Paper Abstract and Keywords
Presentation 2010-10-21 15:30
Mechanism of Work Function Modulation of PtSi Alloying with Yb
Jumpei Ishikawa, Jun Gao, Shun-ichiro Ohmi (Tokyo Tech) SDM2010-154
Abstract (in Japanese) (See Japanese page) 
(in English) The work function modulation of PtSi by alloying with Yb to achieve ultra low contact resistance for advanced CMOS was investigated. PtxYbySi formation were performed by depositing Pt(6-10 nm)/Yb(10-14 nm)/n-Si(100) stacked structure, followed by 800℃/1-30 min silicidation in N2 ambient. It was found that barrier height for electron (Bn) were decreased as the silicidation time iccreases, and φBn was reduced to 0.52 eV by depositing Pt(6 nm)/Yb(14 nm) followed by 800℃/30 min silicidation. From the depth profile of the sample formed by 800℃/1-30 min silicidation, it was found that Yb diffusion toword the silicide/Si interface were enhanced, compared to the sample formed by 500-600℃ silicidation, which leads to more decrease of φBn.
Keyword (in Japanese) (See Japanese page) 
(in English) PtSi / YbSi / barrier height / work function / sputtering / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 241, SDM2010-154, pp. 13-16, Oct. 2010.
Paper # SDM2010-154 
Date of Issue 2010-10-14 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2010-10-21 - 2010-10-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor process science and new technology 
Paper Information
Registration To SDM 
Conference Code 2010-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Mechanism of Work Function Modulation of PtSi Alloying with Yb 
Sub Title (in English)  
Keyword(1) PtSi  
Keyword(2) YbSi  
Keyword(3) barrier height  
Keyword(4) work function  
Keyword(5) sputtering  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Jumpei Ishikawa  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Jun Gao  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Shun-ichiro Ohmi  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
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Speaker Author-1 
Date Time 2010-10-21 15:30:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2010-154 
Volume (vol) vol.110 
Number (no) no.241 
Page pp.13-16 
#Pages 4 
Date of Issue 2010-10-14 (SDM) 

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