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| Presentation | 2010-10-22 15:40 Patterning of source-drain electrodes for organic thin film transistors by softlithography Yusuke Ura, Eiji Itoh (Shinshu Univ.)  OME2010-52 Link to ES Tech. Rep. Archives: OME2010-52 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have investigated the condition of direct patterning of sorce-drain(S-D) electrodes of fullerene (C60) thin film transistors (TFTs) by soft-lithography technique. The transfer printing of Au electrodes was essentially difficult due to the large surface energy of Au compared with those of stamper and C60. We, therefore, inserted the adhesion layer between Au and C60 and/or the sacrifice layer between the stamper and Au, respectively. By conditioning the aspect ratio, stamper material, transfer condition, etc., the fine patterns with the high resolution of 1μm were successfully patterned directly onto C60 layers. We then fabricated the top-contact (TC) C60 TFT with the S-D electrodes patterned by the softlithography technique. The saturated electron mobility of 0.26cm2/Vs and the threshold voltage of +20V was obtained with this technique and the performance was comparable to the conventional TC-TFTs with Au as a S-D electrodes. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | softlithography / microfabrication / fullerene / Au-electrode / self-assembled monolayer / organic thin film transistor / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 243, OME2010-52, pp. 33-36, Oct. 2010. | |
| Paper # | OME2010-52 | |
| Date of Issue | 2010-10-15 (OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OME2010-52 Link to ES Tech. Rep. Archives: OME2010-52 |
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| Conference Information | |
| Committee | OME |
| Conference Date | 2010-10-22 - 2010-10-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | NTT Musashino R&D Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Organic Devices, etc |
| Paper Information | |
| Registration To | OME |
| Conference Code | 2010-10-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Patterning of source-drain electrodes for organic thin film transistors by softlithography |
| Sub Title (in English) | |
| Keyword(1) | softlithography |
| Keyword(2) | microfabrication |
| Keyword(3) | fullerene |
| Keyword(4) | Au-electrode |
| Keyword(5) | self-assembled monolayer |
| Keyword(6) | organic thin film transistor |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yusuke Ura |
| 1st Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 2nd Author's Name | Eiji Itoh |
| 2nd Author's Affiliation | Shinshu University (Shinshu Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-10-22 15:40:00 |
| Presentation Time | 25 minutes |
| Registration for | OME |
| Paper # | OME2010-52 |
| Volume (vol) | vol.110 |
| Number (no) | no.243 |
| Page | pp.33-36 |
| #Pages | 4 |
| Date of Issue | 2010-10-15 (OME) |
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