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Paper Abstract and Keywords
Presentation 2010-10-22 15:50
Dry, Wet and Radical Oxidation Simulation of Silicon Surface Using Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method
Hideyuki Tsuboi, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Kenji Inaba, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2010-169
Abstract (in Japanese) (See Japanese page) 
(in English) Using our newly developed automated system of ultra-accelerated quantum chemical molecular dynamics method, we have investigated the initial process for dry, wet and radical oxidation reaction of silicon surface. In this report, we have analyzed the behavior of reactant molecules during the surface chemical reaction.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon surface / / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 241, SDM2010-169, pp. 69-70, Oct. 2010.
Paper # SDM2010-169 
Date of Issue 2010-10-14 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-169

Conference Information
Committee SDM  
Conference Date 2010-10-21 - 2010-10-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor process science and new technology 
Paper Information
Registration To SDM 
Conference Code 2010-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Dry, Wet and Radical Oxidation Simulation of Silicon Surface Using Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method 
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Keyword(1) Silicon surface  
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1st Author's Name Hideyuki Tsuboi  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Mariko Ise  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Yukie Hayashi  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Yuka Suzuki  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Hiromi Sato  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Yukiko Obara  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Kenji Inaba  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
8th Author's Name Ryo Nagumo  
8th Author's Affiliation Tohoku University (Tohoku Univ.)
9th Author's Name Ryuji Miura  
9th Author's Affiliation Tohoku University (Tohoku Univ.)
10th Author's Name Ai Suzuki  
10th Author's Affiliation Tohoku University (Tohoku Univ.)
11th Author's Name Nozomu Hatakeyama  
11th Author's Affiliation Tohoku University (Tohoku Univ.)
12th Author's Name Akira Endou  
12th Author's Affiliation Tohoku University (Tohoku Univ.)
13th Author's Name Hiromitsu Takaba  
13th Author's Affiliation Tohoku University (Tohoku Univ.)
14th Author's Name Momoji Kubo  
14th Author's Affiliation Tohoku University (Tohoku Univ.)
15th Author's Name Akira Miyamoto  
15th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2010-10-22 15:50:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2010-169 
Volume (vol) vol.110 
Number (no) no.241 
Page pp.69-70 
#Pages 2 
Date of Issue 2010-10-14 (SDM) 

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