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Paper Abstract and Keywords
Presentation 2010-10-22 14:50
Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals
Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI) SDM2010-167
Abstract (in Japanese) (See Japanese page) 
(in English) The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by measuring angle-resolved photoelectron spectra arising from Si 2p and O 1s core levels and a valence band with the same probing depth. We clarified that 1) the SiO2/Si interfaces formed exhibited an almost abrupt compositional transition, 2) the valence band offsets at the Si(111)/Si, Si(110)/Si, and Si(551)/Si interfaces are almost the same and are 0.07 eV smaller than that at the SiO2/Si(100) interface.
Keyword (in Japanese) (See Japanese page) 
(in English) photoelectron spectra / SiO2/Si interface / compositional transition layer / radical oxidation / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 241, SDM2010-167, pp. 61-65, Oct. 2010.
Paper # SDM2010-167 
Date of Issue 2010-10-14 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2010-10-21 - 2010-10-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor process science and new technology 
Paper Information
Registration To SDM 
Conference Code 2010-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals 
Sub Title (in English)  
Keyword(1) photoelectron spectra  
Keyword(2) SiO2/Si interface  
Keyword(3) compositional transition layer  
Keyword(4) radical oxidation  
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Keyword(6)  
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1st Author's Name Tomoyuki Suwa  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Yuki Kumagai  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Akinobu Teramoto  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Tadahiro Ohmi  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Takeo Hattori  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Toyohiko Kinoshita  
6th Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
7th Author's Name Takayuki Muro  
7th Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
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Speaker Author-1 
Date Time 2010-10-22 14:50:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2010-167 
Volume (vol) vol.110 
Number (no) no.241 
Page pp.61-65 
#Pages 5 
Date of Issue 2010-10-14 (SDM) 

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