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Paper Abstract and Keywords
Presentation 2010-10-22 16:20
Strain evaluation in Si at atomically flat SiO2/Si interface
Maki Hattori (Meiji Univ.), Daisuke Kosemura (Meiji Univ./JSPS), Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Motohiro Tomita, Yuuki Mizukami, Yuuki Hashiguchi, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe), Tomoyuki Koganezawa (JASRI) SDM2010-170
Abstract (in Japanese) (See Japanese page) 
(in English) We performed Raman spectroscopy and in-plane XRD measurement to clarify the structure and strain in Si at and near an atomically flat SiO2/Si interface. From the results of Raman spectroscopy, compressive strain exists at the SiO2/Si interface. In addition, it was also confirmed that the compressive strain increased with elevating oxidation temperature from the results of in-plane XRD. We observed Si 110 diffraction and its split into two peaks in spite of forbidden reflection. It was indicated that FWHM and peak intensity of these two peaks correlate with interfacial structure and local strain.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon dioxide film / Raman spectroscopy / In-plane XRD / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 241, SDM2010-170, pp. 71-75, Oct. 2010.
Paper # SDM2010-170 
Date of Issue 2010-10-14 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2010-10-21 - 2010-10-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor process science and new technology 
Paper Information
Registration To SDM 
Conference Code 2010-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Strain evaluation in Si at atomically flat SiO2/Si interface 
Sub Title (in English)  
Keyword(1) Silicon dioxide film  
Keyword(2) Raman spectroscopy  
Keyword(3) In-plane XRD  
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1st Author's Name Maki Hattori  
1st Author's Affiliation Meiji University (Meiji Univ.)
2nd Author's Name Daisuke Kosemura  
2nd Author's Affiliation Meiji University/Japan Society for the Promotion of Science (Meiji Univ./JSPS)
3rd Author's Name Munehisa Takei  
3rd Author's Affiliation Meiji University (Meiji Univ.)
4th Author's Name Kohki Nagata  
4th Author's Affiliation Meiji University (Meiji Univ.)
5th Author's Name Hiroaki Akamatsu  
5th Author's Affiliation Meiji University (Meiji Univ.)
6th Author's Name Motohiro Tomita  
6th Author's Affiliation Meiji University (Meiji Univ.)
7th Author's Name Yuuki Mizukami  
7th Author's Affiliation Meiji University (Meiji Univ.)
8th Author's Name Yuuki Hashiguchi  
8th Author's Affiliation Meiji University (Meiji Univ.)
9th Author's Name Takuya Yamaguchi  
9th Author's Affiliation Meiji University (Meiji Univ.)
10th Author's Name Atsushi Ogura  
10th Author's Affiliation Meiji University (Meiji Univ.)
11th Author's Name Tomoyuki Suwa  
11th Author's Affiliation New Industry Creation Hatchery Center (NICHe)
12th Author's Name Akinobu Teramoto  
12th Author's Affiliation New Industry Creation Hatchery Center (NICHe)
13th Author's Name Takeo Hattori  
13th Author's Affiliation New Industry Creation Hatchery Center (NICHe)
14th Author's Name Tadahiro Ohmi  
14th Author's Affiliation New Industry Creation Hatchery Center (NICHe)
15th Author's Name Tomoyuki Koganezawa  
15th Author's Affiliation Japan Synchrotoron Radiation Research Institute (JASRI)
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Speaker Author-1 
Date Time 2010-10-22 16:20:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2010-170 
Volume (vol) vol.110 
Number (no) no.241 
Page pp.71-75 
#Pages 5 
Date of Issue 2010-10-14 (SDM) 

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