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Paper Abstract and Keywords
Presentation 2010-10-25 13:00
FEA fabrication using thin film bending technology
Tomoya Yoshida, Masayoshi Nagao, Takashi Nishi, Hisashi Ohsaki, Takashi Shimizu, Seigo Kanemaru (AIST) ED2010-128
Abstract (in Japanese) (See Japanese page) 
(in English) A simple field emitter array (FEA) fabrication process based on ion-induced bending (IIB) technology was developed. Using IIB technology, only 20-nm-thick thin film is necessary to form an emitter tip of 1 micrometer in height. This FEA fabrication process does not require any specialized equipments, and the condition of the ion irradiation for IIB is equal to the ion doping process of the general thin-film transistor (TFT) fabrication. And we demonstrated the fabrication of the FEA integration with TFT. The FEA fabrication process using the IIB technology would therefore be compatible with standard TFT fabrication processes and could produce large-area FEA applications.
Keyword (in Japanese) (See Japanese page) 
(in English) ion beam irradiation / thin film / stress relaxation / large-area FEA / FED / X-ray imaging device / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 249, ED2010-128, pp. 1-6, Oct. 2010.
Paper # ED2010-128 
Date of Issue 2010-10-18 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-128

Conference Information
Committee ED  
Conference Date 2010-10-25 - 2010-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2010-10-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) FEA fabrication using thin film bending technology 
Sub Title (in English)  
Keyword(1) ion beam irradiation  
Keyword(2) thin film  
Keyword(3) stress relaxation  
Keyword(4) large-area FEA  
Keyword(5) FED  
Keyword(6) X-ray imaging device  
Keyword(7)  
Keyword(8)  
1st Author's Name Tomoya Yoshida  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Masayoshi Nagao  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Takashi Nishi  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Hisashi Ohsaki  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Takashi Shimizu  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Seigo Kanemaru  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2010-10-25 13:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-128 
Volume (vol) vol.110 
Number (no) no.249 
Page pp.1-6 
#Pages 6 
Date of Issue 2010-10-18 (ED) 

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