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Paper Abstract and Keywords
Presentation 2010-11-11 14:55
Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy -- Efficiency droop mechanism assessed by SNOM --
Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2010-149 CPM2010-115 LQE2010-105
Abstract (in Japanese) (See Japanese page) 
(in English) The temporally and spatially resolved photoluminescence (PL) mappings under the various carrier densities have been performed for a green emitting InGaN/GaN single quantum well (SQW) by scanning near-field microscopy (SNOM) at room temperature to clarify the efficiency droop phenomena. The PL intensity mapping shows that the strong PL intensity domains, sizes of which were several hundred nm and were surrounded by weak PL intensity domains. The time resolved PL results revealed that carriers diffuse out of the probe aperture under high excitation condition at the strong PL intensity domains. Moreover, macroscopic PL measurements under the same high excitation density showed faster nonradiative recombination processes and saturation of the PL intensity, which suggest efficiency droop. These findings led us to a conclusion that the main factor of efficiency droop is carrier migration from the strong PL intensity area to weak one, which is enhanced under the high photoexcitation condition.
Keyword (in Japanese) (See Japanese page) 
(in English) SNOM / InGaN SQW / Efficiency droop / carrier life time / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 273, LQE2010-105, pp. 33-36, Nov. 2010.
Paper # LQE2010-105 
Date of Issue 2010-11-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-149 CPM2010-115 LQE2010-105

Conference Information
Committee CPM LQE ED  
Conference Date 2010-11-11 - 2010-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2010-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy 
Sub Title (in English) Efficiency droop mechanism assessed by SNOM 
Keyword(1) SNOM  
Keyword(2) InGaN SQW  
Keyword(3) Efficiency droop  
Keyword(4) carrier life time  
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1st Author's Name Akira Hashiya  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Akio Kaneta  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Mitsuru Funato  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Yoichi Kawakami  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2010-11-11 14:55:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2010-149, CPM2010-115, LQE2010-105 
Volume (vol) vol.110 
Number (no) no.271(ED), no.272(CPM), no.273(LQE) 
Page pp.33-36 
#Pages 4 
Date of Issue 2010-11-04 (ED, CPM, LQE) 

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