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Paper Abstract and Keywords
Presentation 2010-11-11 13:50
[Invited Talk] Statistical Evaluation of Random Telegraph Sygnal in MOSFET
Akinobu Teramoto, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-174
Abstract (in Japanese) (See Japanese page) 
(in English) Important parameters of Random Telegraph Signal (RTS) in MOSFET, such as amplitude, time constant vary very much. For evaluating exact characteristics of these parameters, a statistical measurement based on large number of samples is essential. In this paper, we report the summary of the developed test pattern and the statistical results for the energy distribution of oxide traps which are extracted from large numbers of MOSFETs by the test pattern.
Keyword (in Japanese) (See Japanese page) 
(in English) MOSFET / RTS / Noise / trap / time constant / test pattern / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 274, SDM2010-174, pp. 17-22, Nov. 2010.
Paper # SDM2010-174 
Date of Issue 2010-11-04 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-174

Conference Information
Committee SDM  
Conference Date 2010-11-11 - 2010-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulations, etc 
Paper Information
Registration To SDM 
Conference Code 2010-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Statistical Evaluation of Random Telegraph Sygnal in MOSFET 
Sub Title (in English)  
Keyword(1) MOSFET  
Keyword(2) RTS  
Keyword(3) Noise  
Keyword(4) trap  
Keyword(5) time constant  
Keyword(6) test pattern  
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Keyword(8)  
1st Author's Name Akinobu Teramoto  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Kenichi Abe  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Shigetoshi Sugawa  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Tadahiro Ohmi  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2010-11-11 13:50:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2010-174 
Volume (vol) vol.110 
Number (no) no.274 
Page pp.17-22 
#Pages 6 
Date of Issue 2010-11-04 (SDM) 

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