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Paper Abstract and Keywords
Presentation 2010-11-11 10:50
GaN growth on pseudo (111)Al substrates by RF-MBE
Tohru Honda, Masato Hayashi, Taiga Goto, Tatsuhiro Igaki (Kogakuin Univ.) ED2010-144 CPM2010-110 LQE2010-100
Abstract (in Japanese) (See Japanese page) 
(in English) Fabrication of integrated light-emitting devices based on GaN requires a vertical carrier injection. In the case, GaN growth on metal substrates is one of the solutions. Epitaxial growth of (111)Al on (0001)sapphire was investigated for the application to pseudo Al substrates for the III-V growth. At the growth temperatures around 200 °C, the Epitaxial growth was achieved. Its atomic force microscopy (AFM) images indicated that the surface morphology of the (111)Al layer was smooth compared with that of bulky (111)Al substrates with chemical polishing treatment. The surface nitridation was also investigated. At the temperature of 350 °C, streaky RHEED patterns were observed. Those results clarified that the pseudo Al substrates grown by MBE was suitable for the substrates using the III-V growth.
Keyword (in Japanese) (See Japanese page) 
(in English) gallium nitride / GaN / Al substrate / MBE / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 273, LQE2010-100, pp. 11-14, Nov. 2010.
Paper # LQE2010-100 
Date of Issue 2010-11-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-144 CPM2010-110 LQE2010-100

Conference Information
Committee CPM LQE ED  
Conference Date 2010-11-11 - 2010-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2010-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN growth on pseudo (111)Al substrates by RF-MBE 
Sub Title (in English)  
Keyword(1) gallium nitride  
Keyword(2) GaN  
Keyword(3) Al substrate  
Keyword(4) MBE  
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1st Author's Name Tohru Honda  
1st Author's Affiliation Kogakuin University (Kogakuin Univ.)
2nd Author's Name Masato Hayashi  
2nd Author's Affiliation Kogakuin University (Kogakuin Univ.)
3rd Author's Name Taiga Goto  
3rd Author's Affiliation Kogakuin University (Kogakuin Univ.)
4th Author's Name Tatsuhiro Igaki  
4th Author's Affiliation Kogakuin University (Kogakuin Univ.)
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Speaker Author-1 
Date Time 2010-11-11 10:50:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2010-144, CPM2010-110, LQE2010-100 
Volume (vol) vol.110 
Number (no) no.271(ED), no.272(CPM), no.273(LQE) 
Page pp.11-14 
#Pages 4 
Date of Issue 2010-11-04 (ED, CPM, LQE) 

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