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Paper Abstract and Keywords
Presentation 2010-11-12 11:15
Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates
Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113
Abstract (in Japanese) (See Japanese page) 
(in English) A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas channels on low dislocation density free-standing GaN substrates have been developed. The VHFETs exhibit a specific on-resistance of 7.6 mcm2 at a threshold voltage of -1.1 V and a breakdown voltage of 672 V. The breakdown voltage and the figure of merit are the highest among those of the GaN-based vertical transistors ever reported. It was also demonstrated that the threshold voltage can be controlled by the thickness of AlGaN layers and a normally-off operation is achieved.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN / heterojunction field-effect transistor / GaN substrate / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 271, ED2010-157, pp. 67-70, Nov. 2010.
Paper # ED2010-157 
Date of Issue 2010-11-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-157 CPM2010-123 LQE2010-113

Conference Information
Committee CPM LQE ED  
Conference Date 2010-11-11 - 2010-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2010-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates 
Sub Title (in English)  
Keyword(1) AlGaN/GaN  
Keyword(2) heterojunction field-effect transistor  
Keyword(3) GaN substrate  
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1st Author's Name Masaya Okada  
1st Author's Affiliation SUMITOMO ELECTRIC INDUSTRIES, LTD. (SEI)
2nd Author's Name Yu Saitoh  
2nd Author's Affiliation SUMITOMO ELECTRIC INDUSTRIES, LTD. (SEI)
3rd Author's Name Mitsunori Yokoyama  
3rd Author's Affiliation SUMITOMO ELECTRIC INDUSTRIES, LTD. (SEI)
4th Author's Name Ken Nakata  
4th Author's Affiliation SUMITOMO ELECTRIC INDUSTRIES, LTD. (SEI)
5th Author's Name Seiji Yaegassi  
5th Author's Affiliation SUMITOMO ELECTRIC INDUSTRIES, LTD. (SEI)
6th Author's Name Koji Katayama  
6th Author's Affiliation SUMITOMO ELECTRIC INDUSTRIES, LTD. (SEI)
7th Author's Name Masaki Ueno  
7th Author's Affiliation SUMITOMO ELECTRIC INDUSTRIES, LTD. (SEI)
8th Author's Name Makoto Kiyama  
8th Author's Affiliation SUMITOMO ELECTRIC INDUSTRIES, LTD. (SEI)
9th Author's Name Tsukuru Katsuyama  
9th Author's Affiliation SUMITOMO ELECTRIC INDUSTRIES, LTD. (SEI)
10th Author's Name Takao Nakamura  
10th Author's Affiliation SUMITOMO ELECTRIC INDUSTRIES, LTD. (SEI)
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Speaker Author-1 
Date Time 2010-11-12 11:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-157, CPM2010-123, LQE2010-113 
Volume (vol) vol.110 
Number (no) no.271(ED), no.272(CPM), no.273(LQE) 
Page pp.67-70 
#Pages 4 
Date of Issue 2010-11-04 (ED, CPM, LQE) 

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