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| Presentation | 2010-11-12 10:50 Vertical GaN Diode on GaN Free-Standing Substrate Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.)  ED2010-156 CPM2010-122 LQE2010-112 Link to ES Tech. Rep. Archives: ED2010-156 CPM2010-122 LQE2010-112 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating characteristics. The breakdown voltage and the specific on-resistance ($R_{on}$A) of the SBD without field plate structure on GaN free-standing substrate were 546 V and 2 $\Omega$$cm^{2}$, respectively. SBDs on GaN free-standing substrate were hardly influenced by the current collapse. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / SBD / GaN free-standing substrate / Current collapse / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 273, LQE2010-112, pp. 63-66, Nov. 2010. | |
| Paper # | LQE2010-112 | |
| Date of Issue | 2010-11-04 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-156 CPM2010-122 LQE2010-112 Link to ES Tech. Rep. Archives: ED2010-156 CPM2010-122 LQE2010-112 |
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| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2010-11-11 - 2010-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2010-11-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Vertical GaN Diode on GaN Free-Standing Substrate |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | SBD |
| Keyword(3) | GaN free-standing substrate |
| Keyword(4) | Current collapse |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shuichi Yagi |
| 1st Author's Affiliation | POWDEC K. K. (POWDEC) |
| 2nd Author's Name | Shoko Hirata |
| 2nd Author's Affiliation | POWDEC K. K. (POWDEC) |
| 3rd Author's Name | Yasunobu Sumida |
| 3rd Author's Affiliation | POWDEC K. K. (POWDEC) |
| 4th Author's Name | Masahiro Bessho |
| 4th Author's Affiliation | POWDEC K. K. (POWDEC) |
| 5th Author's Name | Hiroji Kawai |
| 5th Author's Affiliation | POWDEC K. K. (POWDEC) |
| 6th Author's Name | Toshiharu Matsueda |
| 6th Author's Affiliation | Furukawa Company Limited (Furukawa Co., Ltd.) |
| 7th Author's Name | Akira Usui |
| 7th Author's Affiliation | Furukawa Company Limited (Furukawa Co., Ltd.) |
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| Speaker | Author-1 |
| Date Time | 2010-11-12 10:50:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2010-156, CPM2010-122, LQE2010-112 |
| Volume (vol) | vol.110 |
| Number (no) | no.271(ED), no.272(CPM), no.273(LQE) |
| Page | pp.63-66 |
| #Pages | 4 |
| Date of Issue | 2010-11-04 (ED, CPM, LQE) |
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