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Paper Abstract and Keywords
Presentation 2010-11-12 10:25
Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy
Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.) ED2010-155 CPM2010-121 LQE2010-111
Abstract (in Japanese) (See Japanese page) 
(in English) We carried out nondestructive measurements of the depth profile of etching-induced damage in p-GaN, in particular surface band bending, using Hard X-ray Photoelectron Spectroscopy (HAX-PES). HAX-PES at different take-off angles of photoelectrons made it clear that etching by inductively-coupled plasma (ICP) introduced donor-like states in a surface layer of GaN. We were able to quantitatively analyze band bending and charge distribution in an etched p-GaN. The analysis results indicated the existence of deep donors with a concentration of 1-2E20 cm^-3 in a surface layer whose thickness increased with increasing a bias power of ICP.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / Hard X-ray Photoelectron Spectroscopy / HAX-PES / dry etching / etching-induced damage / inductively-coupled plasma / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 271, ED2010-155, pp. 59-62, Nov. 2010.
Paper # ED2010-155 
Date of Issue 2010-11-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-155 CPM2010-121 LQE2010-111

Conference Information
Committee CPM LQE ED  
Conference Date 2010-11-11 - 2010-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2010-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) Hard X-ray Photoelectron Spectroscopy  
Keyword(3) HAX-PES  
Keyword(4) dry etching  
Keyword(5) etching-induced damage  
Keyword(6) inductively-coupled plasma  
Keyword(7)  
Keyword(8)  
1st Author's Name Daigo Kikuta  
1st Author's Affiliation Toyota Central R&D Labs., Inc. (Toyota CRDL, Inc.)
2nd Author's Name Tetsuo Narita  
2nd Author's Affiliation Toyota Central R&D Labs., Inc. (Toyota CRDL, Inc.)
3rd Author's Name Naoko Takahashi  
3rd Author's Affiliation Toyota Central R&D Labs., Inc. (Toyota CRDL, Inc.)
4th Author's Name Keita Kataoka  
4th Author's Affiliation Toyota Central R&D Labs., Inc. (Toyota CRDL, Inc.)
5th Author's Name Yasuji Kimoto  
5th Author's Affiliation Toyota Central R&D Labs., Inc. (Toyota CRDL, Inc.)
6th Author's Name Tsutomu Uesugi  
6th Author's Affiliation Toyota Central R&D Labs., Inc. (Toyota CRDL, Inc.)
7th Author's Name Tetsu Kachi  
7th Author's Affiliation Toyota Central R&D Labs., Inc. (Toyota CRDL, Inc.)
8th Author's Name Masahiro Sugimoto  
8th Author's Affiliation Toyota Motor Corporation (Toyota Motor Corp.)
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Speaker Author-1 
Date Time 2010-11-12 10:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-155, CPM2010-121, LQE2010-111 
Volume (vol) vol.110 
Number (no) no.271(ED), no.272(CPM), no.273(LQE) 
Page pp.59-62 
#Pages 4 
Date of Issue 2010-11-04 (ED, CPM, LQE) 

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