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Paper Abstract and Keywords
Presentation 2010-12-17 11:20
Laser Doping at Room Temperature in Multi-Crystalline Silicon Solar Cell Process
Mitsuhiro Hasegawa, Kenji Hirata, Tamaki Takayama, Tomohiro Funatani, Takashi Fuyuki (NAIST) SDM2010-189
Abstract (in Japanese) (See Japanese page) 
(in English) In the fabrication of silicon solar cells process, laser doping (LD) technique is recently gathering many attentions because of its advantages such as be operated at room temperature and in the atmosphere. In this study, we tried to apply laser doping method for the emitter formation in multi-crystalline silicon solar cell. As the result, enough photovoltaic properties were achieved by illuminated I-V measurements. In addition, evaluation by EL imaging technique was verified that LD technique can be applied to fabricate multi-crystalline silicon solar cells. Furthermore, by laser irradiation, it has been clarified that cavity is formed on silicon surface.
Keyword (in Japanese) (See Japanese page) 
(in English) Multi-crystalline Silicon / Solar Cell / aser Doping / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 351, SDM2010-189, pp. 25-28, Dec. 2010.
Paper # SDM2010-189 
Date of Issue 2010-12-10 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-189

Conference Information
Committee SDM  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si and Si-related Materials 
Paper Information
Registration To SDM 
Conference Code 2010-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Laser Doping at Room Temperature in Multi-Crystalline Silicon Solar Cell Process 
Sub Title (in English)  
Keyword(1) Multi-crystalline Silicon  
Keyword(2) Solar Cell  
Keyword(3) aser Doping  
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1st Author's Name Mitsuhiro Hasegawa  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Kenji Hirata  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Tamaki Takayama  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Tomohiro Funatani  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Takashi Fuyuki  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2010-12-17 11:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2010-189 
Volume (vol) vol.110 
Number (no) no.351 
Page pp.25-28 
#Pages 4 
Date of Issue 2010-12-10 (SDM) 

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