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Paper Abstract and Keywords
Presentation 2010-12-17 14:10
Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Seiji Nishikawa, Seigo Kitanoya, Hideharu Matsuura (Osaka Electro-Communication Univ.) SDM2010-194
Abstract (in Japanese) (See Japanese page) 
(in English) To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply discharge current transient spectroscopy (DCTS) that is a graphical peak analysis method based on the transient reverse current of a Schottky barrier diode, because transient capacitance methods such as deep level transient spectroscopy and isothermal capacitance transient spectroscopy are feasible only in low-resistivity semiconductors. The reverse current consists the reverse current through the bulk and the surface leakage current. In this study, therefore, we investigate the effects of sacrifice oxidation on the characterization of the high-purity semi-insulating 4H-SiC by DCTS.
Keyword (in Japanese) (See Japanese page) 
(in English) Discharge current transient spectroscopy (DCTS) / High-purity semi-insulating 4H-SiC / Leakage current / Sacrifice oxidation / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 351, SDM2010-194, pp. 51-56, Dec. 2010.
Paper # SDM2010-194 
Date of Issue 2010-12-10 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-194

Conference Information
Committee SDM  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si and Si-related Materials 
Paper Information
Registration To SDM 
Conference Code 2010-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy 
Sub Title (in English)  
Keyword(1) Discharge current transient spectroscopy (DCTS)  
Keyword(2) High-purity semi-insulating 4H-SiC  
Keyword(3) Leakage current  
Keyword(4) Sacrifice oxidation  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Seiji Nishikawa  
1st Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication Univ.)
2nd Author's Name Seigo Kitanoya  
2nd Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication Univ.)
3rd Author's Name Hideharu Matsuura  
3rd Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication Univ.)
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Speaker Author-1 
Date Time 2010-12-17 14:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2010-194 
Volume (vol) vol.110 
Number (no) no.351 
Page pp.51-56 
#Pages 6 
Date of Issue 2010-12-10 (SDM) 

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