Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2010-12-17 16:25
Evaluation of two layers simultaneous crystallized LTPS-TFT memory by the laser irradiation from the back.
Masahiro Matsue, Kazunori Ichikawa, Hiroshi Akamatsu (KCCT), Koji Yamasaki, Masahiro Horita, Yukiharu Uraoka (NAIST) SDM2010-200
Abstract (in Japanese) (See Japanese page) 
(in English) We have reported that the stacked a-Si layers were simultaneous crystallized by the green laser irradiation. In this study, stacked a-Si/SiO2/a-Si on the quartz substrate was crystallized two layers simultaneous by the green laser irradiation from the back. Thus, we fabricated the LTPS-TFT memory which has the upper layer as floating gate and the lower layer as channel layer. As a result, the crystallinity of the channel layer was improved and the on current was markedly increased. Moreover, the interface condition was improved due to the SiO2 layer was annealed by heat of fusion at the crystallization. Therefore, the subthreshold value and memory property were also improved.
Keyword (in Japanese) (See Japanese page) 
(in English) Low Temperature Poly-Si TFT / Green laser / Flash memory / Laser crystallization / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 351, SDM2010-200, pp. 83-86, Dec. 2010.
Paper # SDM2010-200 
Date of Issue 2010-12-10 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-200

Conference Information
Committee SDM  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si and Si-related Materials 
Paper Information
Registration To SDM 
Conference Code 2010-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of two layers simultaneous crystallized LTPS-TFT memory by the laser irradiation from the back. 
Sub Title (in English)  
Keyword(1) Low Temperature Poly-Si TFT  
Keyword(2) Green laser  
Keyword(3) Flash memory  
Keyword(4) Laser crystallization  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Masahiro Matsue  
1st Author's Affiliation Kobe City College of Technology (KCCT)
2nd Author's Name Kazunori Ichikawa  
2nd Author's Affiliation Kobe City College of Technology (KCCT)
3rd Author's Name Hiroshi Akamatsu  
3rd Author's Affiliation Kobe City College of Technology (KCCT)
4th Author's Name Koji Yamasaki  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Masahiro Horita  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
6th Author's Name Yukiharu Uraoka  
6th Author's Affiliation Nara Institute of Science and Technology (NAIST)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2010-12-17 16:25:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2010-200 
Volume (vol) vol.110 
Number (no) no.351 
Page pp.83-86 
#Pages 4 
Date of Issue 2010-12-10 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan