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Paper Abstract and Keywords
Presentation 2010-12-17 15:00
Growth of large InGaAs single crystals as substrates of 1.3 micron wavelength laser diodes
Kyoichi Kinoshita, Shinichi Yoda (JAXA), Hirokatsu Aoki (Furuuchi Chem.), Satoshi Yamamoto (Furuuchi Cem.), Tadatoshi Hosokawa (Furuuchi Che.), Masaaki Matsushima (Furuuchi Chem.), Masakazu Arai (NTT East), Yoshihiro Kawaguchi (NEL), Fumiyoshi Kano (NTT), Yasuhiro Kondo (NEL) LQE2010-123
Abstract (in Japanese) (See Japanese page) 
(in English) We have succeeded in growing homogeneous InxGa1-xAs (x: 0.10 – 0.13) platy single crystals by the traveling liquidus-zone (TLZ) method as substrates of laser diodes for the first time. Key points in the TLZ method are to suppress convection in a melt and to keep constant temperature gradient for obtaining homogeneous crystals. Single crystals with surface area larger than 50×50mm2 were grown. Fabricated laser diodes on these substrates showed high temperature stability and error free transmission and showed the merit of ternary substrates.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaAs / substrate / TLZ method / 1.3 micron wavelength laser diode / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 353, LQE2010-123, pp. 43-46, Dec. 2010.
Paper # LQE2010-123 
Date of Issue 2010-12-10 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee LQE  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2010-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of large InGaAs single crystals as substrates of 1.3 micron wavelength laser diodes 
Sub Title (in English)  
Keyword(1) InGaAs  
Keyword(2) substrate  
Keyword(3) TLZ method  
Keyword(4) 1.3 micron wavelength laser diode  
Keyword(5)  
Keyword(6)  
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Keyword(8)  
1st Author's Name Kyoichi Kinoshita  
1st Author's Affiliation Japan Aerospace Exploration Agency (JAXA)
2nd Author's Name Shinichi Yoda  
2nd Author's Affiliation Japan Aerospace Exploration Agency (JAXA)
3rd Author's Name Hirokatsu Aoki  
3rd Author's Affiliation Furuuchi Chemical Co. Ltd (Furuuchi Chem.)
4th Author's Name Satoshi Yamamoto  
4th Author's Affiliation Furuuchi Chemical Co. Ltd. (Furuuchi Cem.)
5th Author's Name Tadatoshi Hosokawa  
5th Author's Affiliation Furuuchi Chemical Co. Ltd. (Furuuchi Che.)
6th Author's Name Masaaki Matsushima  
6th Author's Affiliation Furuuchi Chemical Co. Ltd. (Furuuchi Chem.)
7th Author's Name Masakazu Arai  
7th Author's Affiliation Nippon Telegraph and Telephone East Corporation (NTT East)
8th Author's Name Yoshihiro Kawaguchi  
8th Author's Affiliation NTT Electronics Corporation (NEL)
9th Author's Name Fumiyoshi Kano  
9th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
10th Author's Name Yasuhiro Kondo  
10th Author's Affiliation NTT Electronics Corporation (NEL)
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Speaker Author-1 
Date Time 2010-12-17 15:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2010-123 
Volume (vol) vol.110 
Number (no) no.353 
Page pp.43-46 
#Pages 4 
Date of Issue 2010-12-10 (LQE) 

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