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Paper Abstract and Keywords
Presentation 2010-12-17 16:05
Lateral Large-Grained Low-Temperature Poly-Si1-xGex TFTs on Glass Substrate
Yasunori Okabe, Kenji Kondo (Tohoku Gakuin Univ.), Kenta Hirose, Junki Suzuki, Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.) SDM2010-199
Abstract (in Japanese) (See Japanese page) 
(in English) It is recognized that field-effect mobility of TFTs increases with grain size. We reported previously that it is possible to fabricate lateral large-grained poly-Si1-xGex films by continuous wave (cw) laser lateral crystallization using amorphous Si1-xGex as the precursor. The melting temperature of Si1-xGex films is lower than that of Si films. Therefore, the application of lateral large-grained poly-Si1-xGex films to TFTs on glass substrates will yield high-performance TFTs and reduce the thermal damage to the substrates. In this study, we fabricated poly-Si0.95Ge0.05 TFTs on glass substrates at a low process temperature of 550°C and obtained n-channel field-effect mobility of 145 cm2/Vs.
Keyword (in Japanese) (See Japanese page) 
(in English) Si1-xGex / Thin Film Transistors / TFT / Polycrystalline film / solar cell / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 351, SDM2010-199, pp. 79-82, Dec. 2010.
Paper # SDM2010-199 
Date of Issue 2010-12-10 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si and Si-related Materials 
Paper Information
Registration To SDM 
Conference Code 2010-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Lateral Large-Grained Low-Temperature Poly-Si1-xGex TFTs on Glass Substrate 
Sub Title (in English)  
Keyword(1) Si1-xGex  
Keyword(2) Thin Film Transistors  
Keyword(3) TFT  
Keyword(4) Polycrystalline film  
Keyword(5) solar cell  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yasunori Okabe  
1st Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
2nd Author's Name Kenji Kondo  
2nd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
3rd Author's Name Kenta Hirose  
3rd Author's Affiliation Shimane University (Shimane Univ.)
4th Author's Name Junki Suzuki  
4th Author's Affiliation Shimane University (Shimane Univ.)
5th Author's Name Kuninori Kitahara  
5th Author's Affiliation Shimane University (Shimane Univ.)
6th Author's Name Akito Hara  
6th Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
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Speaker Author-1 
Date Time 2010-12-17 16:05:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2010-199 
Volume (vol) vol.110 
Number (no) no.351 
Page pp.79-82 
#Pages 4 
Date of Issue 2010-12-10 (SDM) 

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