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| Presentation | 2010-12-17 12:00 Effect of H2-N2 Plasma Exposure on Nanostructured Silicon Akitsugu Watanabe, Kenichi Suda, Hideki Nakada, Mitsuya Motohashi (Tokyo Denki Univ.)  SDM2010-191 Link to ES Tech. Rep. Archives: SDM2010-191 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this study, we researched the effect of H2-N2 plasma exposure on nanostructured silicon. The plasma treatment to the silicon surface was carried out by using radio frequency glow-discharge. It was found that the surface morphology, atomic bonding configuration, and electric defect-state of the silicon nanostructured were changed by plasma exposure. In addition, the relationship between these structural changes and plasma state was looked at. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | silicon / nanostructure / H2-N2 plasma / atomic bonding / defect density / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 351, SDM2010-191, pp. 33-37, Dec. 2010. | |
| Paper # | SDM2010-191 | |
| Date of Issue | 2010-12-10 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-191 Link to ES Tech. Rep. Archives: SDM2010-191 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2010-12-17 - 2010-12-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto Univ. (Katsura) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si and Si-related Materials |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of H2-N2 Plasma Exposure on Nanostructured Silicon |
| Sub Title (in English) | |
| Keyword(1) | silicon |
| Keyword(2) | nanostructure |
| Keyword(3) | H2-N2 plasma |
| Keyword(4) | atomic bonding |
| Keyword(5) | defect density |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Akitsugu Watanabe |
| 1st Author's Affiliation | Tokyo Denki University (Tokyo Denki Univ.) |
| 2nd Author's Name | Kenichi Suda |
| 2nd Author's Affiliation | Tokyo Denki University (Tokyo Denki Univ.) |
| 3rd Author's Name | Hideki Nakada |
| 3rd Author's Affiliation | Tokyo Denki University (Tokyo Denki Univ.) |
| 4th Author's Name | Mitsuya Motohashi |
| 4th Author's Affiliation | Tokyo Denki University (Tokyo Denki Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-12-17 12:00:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2010-191 |
| Volume (vol) | vol.110 |
| Number (no) | no.351 |
| Page | pp.33-37 |
| #Pages | 5 |
| Date of Issue | 2010-12-10 (SDM) |
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