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Paper Abstract and Keywords
Presentation 2010-12-17 15:25
Lasing in GaAs1-xBix/GaAs thin film cavity by photo-pumping and its low-temperature-dependent oscillation wavelength
Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto (Kyoto Inst. Tech.) LQE2010-124
Abstract (in Japanese) (See Japanese page) 
(in English) Lasing oscillation from a GaAs1-xBix/GaAs thin film with a Fabry-Perot cavity is achieved by photo-pumping. The GaAs0.975Bi0.025 active layer was grown at as low as 350 oC by molecular beam epitaxy. The characteristic temperature of the laser was 83 K between 160 and 240 K. In this temperature range, temperature coefficient of the lasing emission peak energy was -0.18 meV/K, which is 40% of the value for the band gap of GaAs. Above 240 K, the lasing threshold pumping power increased sharply, and the lasing emission peak energy started shifting to a higher energy.
Keyword (in Japanese) (See Japanese page) 
(in English) Bismide III-V semiconductor-semimetal alloy / Molecular beam epitaxy / Fabry-Perot laser / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 353, LQE2010-124, pp. 47-50, Dec. 2010.
Paper # LQE2010-124 
Date of Issue 2010-12-10 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee LQE  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2010-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Lasing in GaAs1-xBix/GaAs thin film cavity by photo-pumping and its low-temperature-dependent oscillation wavelength 
Sub Title (in English) * 
Keyword(1) Bismide III-V semiconductor-semimetal alloy  
Keyword(2) Molecular beam epitaxy  
Keyword(3) Fabry-Perot laser  
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1st Author's Name Yoriko Tominaga  
1st Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
2nd Author's Name Kunishige Oe  
2nd Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
3rd Author's Name Masahiro Yoshimoto  
3rd Author's Affiliation Kyoto Institute of Technology (Kyoto Inst. Tech.)
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Speaker Author-1 
Date Time 2010-12-17 15:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2010-124 
Volume (vol) vol.110 
Number (no) no.353 
Page pp.47-50 
#Pages 4 
Date of Issue 2010-12-10 (LQE) 

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