Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2010-12-17 10:40
Ion channeling at Heusler alloy Fe3-xMnxSi(111)/Ge(111) heteroepitaxial interfaces
Takahito Nakajima, Bui Matsukura (Kyoto Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.) SDM2010-187
Abstract (in Japanese) (See Japanese page) 
(in English) The axial orientation of epitaxially grown Fe3-xMnxSi(111) on Ge(111) has been reported by using ion channeling. It has been reported that the axial orientation is dominated by the lattice mismatch of interfaces. In this study, we have computed the static displacement related to axial disorder of arrangement of atoms and discussed what the dominant factors for the static displacement by ion channeling at low temperature. We found that the static displacement decreases as the lattice mismatch decrease. This results suggest that lattice mismatch may be one of the factors which cause disorder of axial arrangement of atoms at Fe3-xMnxSi(111)/Ge(111) heteroepitaxial interfaces.
Keyword (in Japanese) (See Japanese page) 
(in English) ion channeling / Heusler alloy / static displacement / lattice mismatch / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 351, SDM2010-187, pp. 13-17, Dec. 2010.
Paper # SDM2010-187 
Date of Issue 2010-12-10 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-187

Conference Information
Committee SDM  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si and Si-related Materials 
Paper Information
Registration To SDM 
Conference Code 2010-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ion channeling at Heusler alloy Fe3-xMnxSi(111)/Ge(111) heteroepitaxial interfaces 
Sub Title (in English)  
Keyword(1) ion channeling  
Keyword(2) Heusler alloy  
Keyword(3) static displacement  
Keyword(4) lattice mismatch  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takahito Nakajima  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Bui Matsukura  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Kazumasa Narumi  
3rd Author's Affiliation Japan Atomic Energy Agency (JAEA)
4th Author's Name Yoshihito Maeda  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2010-12-17 10:40:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2010-187 
Volume (vol) vol.110 
Number (no) no.351 
Page pp.13-17 
#Pages 5 
Date of Issue 2010-12-10 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan