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Paper Abstract and Keywords
Presentation 2010-12-17 15:45
Photoluminescence and deep level transient spectroscopy study on recrystallization of ultra-shallow junction
Masashi Okutani, Shuhei Takashima, Masahiro Yoshimoto (KIT), Woo Sik Yoo (WaferMasters, Inc.) SDM2010-198
Abstract (in Japanese) (See Japanese page) 
(in English) Recrystallization of low-energy implanted ultra-shallow junctions (USJs) are characterized by photoluminescence (PL) and four-point prove. For the samples after and before anneal, PL intensity is accurately reverse proportional to sheet resistance. PL can be indicative of recrystallization. Furthermore, comparing PL with deep level transient spectroscopy study, we found the correlation between PL intensity and defect concentration. PL is a good measurement to prove the generation and annihilation of detects in the process in USJs.
Keyword (in Japanese) (See Japanese page) 
(in English) ultra-shallow junction / ion-implantation / recrystallization / rapid thermal anneal / photoluminescence / deep level transient spectroscopy / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 351, SDM2010-198, pp. 73-78, Dec. 2010.
Paper # SDM2010-198 
Date of Issue 2010-12-10 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si and Si-related Materials 
Paper Information
Registration To SDM 
Conference Code 2010-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Photoluminescence and deep level transient spectroscopy study on recrystallization of ultra-shallow junction 
Sub Title (in English)  
Keyword(1) ultra-shallow junction  
Keyword(2) ion-implantation  
Keyword(3) recrystallization  
Keyword(4) rapid thermal anneal  
Keyword(5) photoluminescence  
Keyword(6) deep level transient spectroscopy  
Keyword(7)  
Keyword(8)  
1st Author's Name Masashi Okutani  
1st Author's Affiliation Kyoto Institute of Technology (KIT)
2nd Author's Name Shuhei Takashima  
2nd Author's Affiliation Kyoto Institute of Technology (KIT)
3rd Author's Name Masahiro Yoshimoto  
3rd Author's Affiliation Kyoto Institute of Technology (KIT)
4th Author's Name Woo Sik Yoo  
4th Author's Affiliation WaferMasters, Inc. (WaferMasters, Inc.)
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Speaker Author-1 
Date Time 2010-12-17 15:45:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2010-198 
Volume (vol) vol.110 
Number (no) no.351 
Page pp.73-78 
#Pages 6 
Date of Issue 2010-12-10 (SDM) 

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