Paper Abstract and Keywords |
Presentation |
2010-12-17 15:45
Photoluminescence and deep level transient spectroscopy study on recrystallization of ultra-shallow junction Masashi Okutani, Shuhei Takashima, Masahiro Yoshimoto (KIT), Woo Sik Yoo (WaferMasters, Inc.) SDM2010-198 Link to ES Tech. Rep. Archives: SDM2010-198 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Recrystallization of low-energy implanted ultra-shallow junctions (USJs) are characterized by photoluminescence (PL) and four-point prove. For the samples after and before anneal, PL intensity is accurately reverse proportional to sheet resistance. PL can be indicative of recrystallization. Furthermore, comparing PL with deep level transient spectroscopy study, we found the correlation between PL intensity and defect concentration. PL is a good measurement to prove the generation and annihilation of detects in the process in USJs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ultra-shallow junction / ion-implantation / recrystallization / rapid thermal anneal / photoluminescence / deep level transient spectroscopy / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 351, SDM2010-198, pp. 73-78, Dec. 2010. |
Paper # |
SDM2010-198 |
Date of Issue |
2010-12-10 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2010-198 Link to ES Tech. Rep. Archives: SDM2010-198 |
Conference Information |
Committee |
SDM |
Conference Date |
2010-12-17 - 2010-12-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto Univ. (Katsura) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Characterization of Si and Si-related Materials |
Paper Information |
Registration To |
SDM |
Conference Code |
2010-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Photoluminescence and deep level transient spectroscopy study on recrystallization of ultra-shallow junction |
Sub Title (in English) |
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Keyword(1) |
ultra-shallow junction |
Keyword(2) |
ion-implantation |
Keyword(3) |
recrystallization |
Keyword(4) |
rapid thermal anneal |
Keyword(5) |
photoluminescence |
Keyword(6) |
deep level transient spectroscopy |
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1st Author's Name |
Masashi Okutani |
1st Author's Affiliation |
Kyoto Institute of Technology (KIT) |
2nd Author's Name |
Shuhei Takashima |
2nd Author's Affiliation |
Kyoto Institute of Technology (KIT) |
3rd Author's Name |
Masahiro Yoshimoto |
3rd Author's Affiliation |
Kyoto Institute of Technology (KIT) |
4th Author's Name |
Woo Sik Yoo |
4th Author's Affiliation |
WaferMasters, Inc. (WaferMasters, Inc.) |
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Speaker |
Author-1 |
Date Time |
2010-12-17 15:45:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2010-198 |
Volume (vol) |
vol.110 |
Number (no) |
no.351 |
Page |
pp.73-78 |
#Pages |
6 |
Date of Issue |
2010-12-10 (SDM) |
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