Paper Abstract and Keywords |
Presentation |
2010-12-17 11:10
Lateral Current Injection 1550nm Wavelength DFB Laser with a-Si Surface Grating Takahiko Shindo, Tadashi Okumura, Hitomi Ito, Takayuki Koguchi, Daisuke Takahashi, Yuki Atsumi, Joonhyun Kang, Ryo Osabe, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech) LQE2010-118 Link to ES Tech. Rep. Archives: LQE2010-118 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The performance of LSI will hit performance ceiling by global wiring data capacity with technological progress like a signal delay or thermal problem. One of the promising candidates to solve this problem is replacing the electrical global wiring on chip by an optical interconnection. A semiconductor membrane laser, which consists of a high-ondex contrast waveguide, is expected to operate with ultra low threshold current due to an enhanced modal gain. We have introduced a lateral current injection (LCI) structure for electrical pumped membrane laser. In this paper, we tried to demonstrate LCI type DFB laser with surface grating structure. At first, we fabricated the LCI-DFB laser with etched GaInAsP surface grating, and realized the first single mode operation of LCI-DFB laser under Furthermore, we introduced a-Si surface grating structure in LCI laser and improved lasing characteristics. A low threshold current of 7.0 mA, and high differential quantum efficiency from a front facet of 43% were obtained under a room-temperature continuous-wave condition. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Semiconductor membrane laser / Lateral current injection / Strong optical confinement / Surface grating / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 353, LQE2010-118, pp. 17-22, Dec. 2010. |
Paper # |
LQE2010-118 |
Date of Issue |
2010-12-10 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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LQE2010-118 Link to ES Tech. Rep. Archives: LQE2010-118 |