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Paper Abstract and Keywords
Presentation 2011-01-14 14:30
A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars
Ko Kanaya, Hirotaka Amasuga, Shinsuke Watanabe, Yoshitsugu Yamamoto, Naoki Kosaka, Shinichi Miyakuni, Seiki Goto, Akihiro Shima (Mitsubishi Electric) ED2010-190 MW2010-150 Link to ES Tech. Rep. Archives: ED2010-190 MW2010-150
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents a low 1/f noise and high reliability InP/GaAsSb DHBT developed for automotive radars. To improve 1/f noise and reliability, experimental analyses on the recombination current have been carried out. As a result, we have clarified that the recombination current which can affect 1/f noise and reliability, originates from the surface of the base. We have optimized the base surface structure with the ledge and SiN passivation film. The optimized DHBT offers the lower 1/f noise level than that of the non-optimized DHBT by 7 dB. Additionally, in the high temperature burn-in test, no degradation has been observed even after 1,000 hrs. The W-band oscillator with the optimized HBT delivers the lower phase noise of -107 dBc/Hz at 1MHz-offset compared with that of the non-optimized HBT oscillator by 10 dB.
Keyword (in Japanese) (See Japanese page) 
(in English) InP / GaAsSb / HBT / 1/f noise / recombination current / oscillator / phase noise /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 358, ED2010-190, pp. 81-86, Jan. 2011.
Paper # ED2010-190 
Date of Issue 2011-01-06 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-190 MW2010-150 Link to ES Tech. Rep. Archives: ED2010-190 MW2010-150

Conference Information
Committee MW ED  
Conference Date 2011-01-13 - 2011-01-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies 
Paper Information
Registration To ED 
Conference Code 2011-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars 
Sub Title (in English)  
Keyword(1) InP  
Keyword(2) GaAsSb  
Keyword(3) HBT  
Keyword(4) 1/f noise  
Keyword(5) recombination current  
Keyword(6) oscillator  
Keyword(7) phase noise  
Keyword(8)  
1st Author's Name Ko Kanaya  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
2nd Author's Name Hirotaka Amasuga  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
3rd Author's Name Shinsuke Watanabe  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
4th Author's Name Yoshitsugu Yamamoto  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
5th Author's Name Naoki Kosaka  
5th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
6th Author's Name Shinichi Miyakuni  
6th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
7th Author's Name Seiki Goto  
7th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
8th Author's Name Akihiro Shima  
8th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
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Speaker Author-1 
Date Time 2011-01-14 14:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-190, MW2010-150 
Volume (vol) vol.110 
Number (no) no.358(ED), no.359(MW) 
Page pp.81-86 
#Pages
Date of Issue 2011-01-06 (ED, MW) 


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