Paper Abstract and Keywords |
Presentation |
2011-01-14 14:30
A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars Ko Kanaya, Hirotaka Amasuga, Shinsuke Watanabe, Yoshitsugu Yamamoto, Naoki Kosaka, Shinichi Miyakuni, Seiki Goto, Akihiro Shima (Mitsubishi Electric) ED2010-190 MW2010-150 Link to ES Tech. Rep. Archives: ED2010-190 MW2010-150 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper presents a low 1/f noise and high reliability InP/GaAsSb DHBT developed for automotive radars. To improve 1/f noise and reliability, experimental analyses on the recombination current have been carried out. As a result, we have clarified that the recombination current which can affect 1/f noise and reliability, originates from the surface of the base. We have optimized the base surface structure with the ledge and SiN passivation film. The optimized DHBT offers the lower 1/f noise level than that of the non-optimized DHBT by 7 dB. Additionally, in the high temperature burn-in test, no degradation has been observed even after 1,000 hrs. The W-band oscillator with the optimized HBT delivers the lower phase noise of -107 dBc/Hz at 1MHz-offset compared with that of the non-optimized HBT oscillator by 10 dB. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InP / GaAsSb / HBT / 1/f noise / recombination current / oscillator / phase noise / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 358, ED2010-190, pp. 81-86, Jan. 2011. |
Paper # |
ED2010-190 |
Date of Issue |
2011-01-06 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2010-190 MW2010-150 Link to ES Tech. Rep. Archives: ED2010-190 MW2010-150 |
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