Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2011-02-07 12:40
A highly reliable Cu interconnect with CuSiN and Ti-based barrier metal: Impact of oxgen surface treatment
Yumi Hayashi, Noriaki Matsunaga, Makoto Wada, Shinichi Nakao, Kei Watanabe, Satoshi Kato, Atsuko Sakata, Akihiro Kajita, Hideki Shibata (Toshiba Corp.) SDM2010-219
Abstract (in Japanese) (See Japanese page) 
(in English) A trade-off property of CuSiN between EM improvement and line resistance increase was resolved by a breakthrough that leaves oxygen at grain boundary of Cu line surface before CuSiN formation. Then, the combination of CuSiN and Ti-rich TiN (Ti(N)) barrier metal (-BM) was applied. Oxygen left by weakening process strength of CuOx reduction lowered line resistance, because Si diffusion causing line resistance increase was controlled by the oxygen at grain boundary. Low-damage process of CuOx reduction also improved voltage ramp dielectric breakdown (VRDB) property. Excellent EM performance brought about by CuSiN was kept by the combination with Ti(N)-BM, because the oxygen made Si and Ti distributions uniform at grain boundary of Cu surface by forming Ti-silicide. Cu atom transport that caused EM failure was suppressed throughout grain boundary of Cu surface.
Keyword (in Japanese) (See Japanese page) 
(in English) CuSiN / Ti-based barrier / Cu interconnect / Electromigration / oxygen / CuOx reduction / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 408, SDM2010-219, pp. 19-23, Feb. 2011.
Paper # SDM2010-219 
Date of Issue 2011-01-31 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-219

Conference Information
Committee SDM  
Conference Date 2011-02-07 - 2011-02-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2011-02-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A highly reliable Cu interconnect with CuSiN and Ti-based barrier metal: Impact of oxgen surface treatment 
Sub Title (in English)  
Keyword(1) CuSiN  
Keyword(2) Ti-based barrier  
Keyword(3) Cu interconnect  
Keyword(4) Electromigration  
Keyword(5) oxygen  
Keyword(6) CuOx reduction  
Keyword(7)  
Keyword(8)  
1st Author's Name Yumi Hayashi  
1st Author's Affiliation Corporate Research & Development Center, Toshiba Corporation (Toshiba Corp.)
2nd Author's Name Noriaki Matsunaga  
2nd Author's Affiliation Corporate Research & Development Center, Toshiba Corporation (Toshiba Corp.)
3rd Author's Name Makoto Wada  
3rd Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba Corp.)
4th Author's Name Shinichi Nakao  
4th Author's Affiliation Corporate Research & Development Center, Toshiba Corporation (Toshiba Corp.)
5th Author's Name Kei Watanabe  
5th Author's Affiliation Corporate Research & Development Center, Toshiba Corporation (Toshiba Corp.)
6th Author's Name Satoshi Kato  
6th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba Corp.)
7th Author's Name Atsuko Sakata  
7th Author's Affiliation Corporate Research & Development Center, Toshiba Corporation (Toshiba Corp.)
8th Author's Name Akihiro Kajita  
8th Author's Affiliation Corporate Research & Development Center, Toshiba Corporation (Toshiba Corp.)
9th Author's Name Hideki Shibata  
9th Author's Affiliation Corporate Research & Development Center, Toshiba Corporation (Toshiba Corp.)
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2011-02-07 12:40:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2010-219 
Volume (vol) vol.110 
Number (no) no.408 
Page pp.19-23 
#Pages 5 
Date of Issue 2011-01-31 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan