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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tetsuro Endo (Tohoku Univ.)
Vice Chair Yasuo Nara (Fujitsu Microelectronics)
Secretary Yukinori Ono (NTT), Katsunori Onishi (Kyushu Inst. of Tech.)
Assistant Shintaro Nomura (Univ. of Tsukuba)

Conference Date Mon, Feb 7, 2011 10:00 - 17:00
Topics  
Conference Place  
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Mon, Feb 7 AM 
10:00 - 17:00
  10:00-10:05 Opening Addres ( 5 min. )
(1) 10:05-10:50 [Keynote Address]
Technical Challenges for 3D Packaging and Chip Package Interaction SDM2010-216
Yasumitsu Orii, Kazushige Toriyama, Akihiro Horibe, Keiji Matsumoto, Katsuyuki Sakumai (IBM Japan)
(2) 10:50-11:20 Path-finding for Integration of Robust Low-k (k-2.5) SiOCH in System LSI SDM2010-217 Naoya Inoue, Makoto Ueki, Hironori Yamamoto, Ippei Kume, Jun Kawahara, Manabu Iguchi, Hirokazu Honda, Yoshitaka Horikoshi, Yoshihiro Hayashi (Renesas Electronics Corp.)
(3) 11:20-11:50 Application of Compliant Bump Technology to Image Sensor SDM2010-218 Naoya Watanabe, Tanemasa Asano (Kyushu Univ.)
  11:50-12:40 Lunch Break ( 50 min. )
(4) 12:40-13:10 A highly reliable Cu interconnect with CuSiN and Ti-based barrier metal: Impact of oxgen surface treatment SDM2010-219 Yumi Hayashi, Noriaki Matsunaga, Makoto Wada, Shinichi Nakao, Kei Watanabe, Satoshi Kato, Atsuko Sakata, Akihiro Kajita, Hideki Shibata (Toshiba Corp.)
(5) 13:10-13:40 Networked nanographite growth using photoemission-assisted enhanced plasma CVD: discharge condition dependence of the crystallographic quality SDM2010-220 Shuichi Ogawa (Tohoku Univ./JST), Motonobu Sato (Fujitsu/JST), Haruki Sumi (Tohoku Univ.), Mizuhisa Nihei (Fujitsu/JST), Yuji Takakuwa (Tohoku Univ./JST)
(6) 13:40-14:10 Dependence of Ti-Based Self-Formed Barrier Structure on Dielectric-Layer Composition SDM2010-221 Kazuyuki Kohama, Kazuhiro Ito, Yutaka Sonobayashi (Kyoto Univ.), Kazuyuki Ohmori, Kenichi Mori, Kazuyoshi Maekawa (Renesas), Yasuharu Shirai (Kyoto Univ.), Masanori Murakami (The Ritsumeikan)
(7) 14:10-14:40 Networked-Nanographite Wire Grown by Metal-Photoemission-assisted Plasma-enhanced CVD without Catalysts SDM2010-222 Motonobu Sato (Fujitsu Ltd./JST/AIST), Shuichi Ogawa (Tohoku Univ./JST), Eiji Ikenaga (JASRI/JST), Yuji Takakuwa (Tohoku Univ./JST), Mizuhisa Nihei (Fujitsu Ltd./JST/AIST), Naoki Yokoyama (AIST)
  14:40-14:55 Break ( 15 min. )
(8) 14:55-15:25 Stress Mapping in Thinned Si Wafer with Cu-TSV and Cu-Sn Microbumps SDM2010-223 Murugesan Mariappan, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (Tohoku Univ.)
(9) 15:25-15:55 Development of Low Temperature Bump-less TSV Process in 3D Stacking Technology SDM2010-224 Hideki Kitada, Nobuhide Maeda (The Univ. of Tokyo), Koji Fujimoto (Dai Nippon Printing), Yoriko Mizushima, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Laboratories Ltd.), Takayuki Ohba (The Univ. of Tokyo)
(10) 15:55-16:25 Highly hermetic barrier Low-k SiC (k<3.5) by using new precursor SDM2010-225 Tatsuya Usami, Chikako Kobayashi, Yukio Miura (Renesas), Shuji Nagano (Taiyo-Nippon Sanso), Koichi Ohto (Renesas), Hideharu Shimizu (Taiyo-Nippon Sanso), Takeshi Kada, Tatsuya Ohira (Tri Chemical Lab. Inc.), Kunihiro Fujii (Renesas)
(11) 16:25-16:55 Highly Manufacturable ELK Integration Technology with Metal Hard Mask Process for High Performance 32nm-node Interconnect and Beyond SDM2010-226 S. Matsumoto, T. Harada, Y. Morinaga, D. Inagaki, J. Shibata, K. Tashiro, T. Kabe, Akihisa Iwasaki, S. Hirao, M. Tsutsue, K. Nomura, K. Seo, T. Hinomura, Naoki Torazawa, S. Suzuki (Panasonic)
  16:55-17:00 Closing Address ( 5 min. )

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-: Hisahiro.Ansai@jp.sony.com 


Last modified: 2010-12-15 13:12:38


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