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Paper Abstract and Keywords
Presentation 2011-02-24 11:35
Stochastic resonance using single electrons
Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ED2010-205 SDM2010-240
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrate stochastic resonance (SR) with single electrons (SEs) using nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs). Input signal applied to a MOSFET modulates SE transport in an average manner based on non-linear characteristics. On the other hand, an individual SE goes through the MOSFET in a completely random manner, which corresponds to shot noise. SEs transferred to a storage node are counted precisely by the other MOSFET and used as an output signal. The correlation between the input and output signals is improved by taking advantage of extrinsic noise as well as the intrinsic shot noise composed of SEs. It is confirmed that the shot-noise-assisted SR allows fast operation with a simple system. Pattern perception utilizing SR is also demonstrated.
Keyword (in Japanese) (See Japanese page) 
(in English) stochastic resonance / single electron / Si MOSFET / shot noise / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 423, ED2010-205, pp. 73-77, Feb. 2011.
Paper # ED2010-205 
Date of Issue 2011-02-16 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-205 SDM2010-240

Conference Information
Committee SDM ED  
Conference Date 2011-02-23 - 2011-02-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To ED 
Conference Code 2011-02-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Stochastic resonance using single electrons 
Sub Title (in English)  
Keyword(1) stochastic resonance  
Keyword(2) single electron  
Keyword(3) Si MOSFET  
Keyword(4) shot noise  
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1st Author's Name Katsuhiko Nishiguchi  
1st Author's Affiliation NTT Basic Research Laboratories (NTT)
2nd Author's Name Akira Fujiwara  
2nd Author's Affiliation NTT Basic Research Laboratories (NTT)
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Speaker Author-1 
Date Time 2011-02-24 11:35:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-205, SDM2010-240 
Volume (vol) vol.110 
Number (no) no.423(ED), no.424(SDM) 
Page pp.73-77 
#Pages 5 
Date of Issue 2011-02-16 (ED, SDM) 

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