講演抄録/キーワード |
講演名 |
2011-03-04 10:20
Study on diamond thin film semiconducting devices for application to a development of hard-electronics high frequency driving circuit ○Jeong-Gab Ju・Young-Bae Park・Bo-Ra Jung・Jang-Hyeon Jeong・Eui-Hoon Jang・Suk-Youb Kang・Young Yun(Korea Maritime Univ.) MW2010-166 エレソ技報アーカイブへのリンク:MW2010-166 |
抄録 |
(和) |
In this paper, basic electrical properties of semiconducting diamond were investigated in order to check its capability for application to electron device. Especially, a field effect transistor was fabricated on diamond substrate, and its electrical properties were investigated. A clear current modulation characteristic was observed from the field effect transistor. Maximum breakdown voltage was - 150 V. An inverter circuit was fabricated on diamond substrate, and it showed good electrical performances at a high temperature of 220 。ニC |
(英) |
In this paper, basic electrical properties of semiconducting diamond were investigated in order to check its capability for application to electron device. Especially, a field effect transistor was fabricated on diamond substrate, and its electrical properties were investigated. A clear current modulation characteristic was observed from the field effect transistor. Maximum breakdown voltage was - 150 V. An inverter circuit was fabricated on diamond substrate, and it showed good electrical performances at a high temperature of 220 。ニC |
キーワード |
(和) |
Diamond / Hard-electronics / Microwave / Transmission line / Driving circuit / FET / LED / |
(英) |
Diamond / Hard-electronics / Microwave / Transmission line / Driving circuit / FET / LED / |
文献情報 |
信学技報, vol. 110, no. 447, MW2010-166, pp. 83-85, 2011年3月. |
資料番号 |
MW2010-166 |
発行日 |
2011-02-24 (MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
MW2010-166 エレソ技報アーカイブへのリンク:MW2010-166 |