Paper Abstract and Keywords |
Presentation |
2011-03-04 10:20
Study on diamond thin film semiconducting devices for application to a development of hard-electronics high frequency driving circuit Jeong-Gab Ju, Young-Bae Park, Bo-Ra Jung, Jang-Hyeon Jeong, Eui-Hoon Jang, Suk-Youb Kang, Young Yun (Korea Maritime Univ.) MW2010-166 Link to ES Tech. Rep. Archives: MW2010-166 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, basic electrical properties of semiconducting diamond were investigated in order to check its capability for application to electron device. Especially, a field effect transistor was fabricated on diamond substrate, and its electrical properties were investigated. A clear current modulation characteristic was observed from the field effect transistor. Maximum breakdown voltage was - 150 V. An inverter circuit was fabricated on diamond substrate, and it showed good electrical performances at a high temperature of 220 。ニC |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Diamond / Hard-electronics / Microwave / Transmission line / Driving circuit / FET / LED / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 447, MW2010-166, pp. 83-85, March 2011. |
Paper # |
MW2010-166 |
Date of Issue |
2011-02-24 (MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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MW2010-166 Link to ES Tech. Rep. Archives: MW2010-166 |
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