Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2011-04-19 11:45
Suppress of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor
Kousuke Miyaji, Kentaro Honda, Shuhei Tanakamaru (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo) ICD2011-13
Abstract (in Japanese) (See Japanese page) 
(in English) 8T-SRAM cell with asymmetric pass gate transistor by local electron injection is proposed to solve half select disturb. Two types of electron injection scheme: both side injection scheme and self-repair one side injection scheme are analyzed comprehensively for 65nm technology node 8T-SRAM cell and also for 6T-SRAM cell. This paper shows that in the 6T-SRAM with the local injected electrons [1] the read speed degrades by as much as 6.3 times. In contrast, the proposed 8T-SRAM cell with the self-repair one side injection scheme is most suitable to solve the conflict of the half select disturb, write disturb and read speed. In the proposed 8T-SRAM, the disturb margin increases by 141% without write margin or read speed degradation. The proposed scheme has no process or area penalty compared with the standard CMOS-process 8T-SRAM.
Keyword (in Japanese) (See Japanese page) 
(in English) SRAM / 8T-SRAM / Local electron injection / Half select disturb / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 6, ICD2011-13, pp. 71-76, April 2011.
Paper # ICD2011-13 
Date of Issue 2011-04-11 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2011-13

Conference Information
Committee ICD  
Conference Date 2011-04-18 - 2011-04-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Kobe University Takigawa Memorial Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2011-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Suppress of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor 
Sub Title (in English)  
Keyword(1) SRAM  
Keyword(2) 8T-SRAM  
Keyword(3) Local electron injection  
Keyword(4) Half select disturb  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kousuke Miyaji  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Kentaro Honda  
2nd Author's Affiliation University of Tokyo (Univ. of Tokyo)
3rd Author's Name Shuhei Tanakamaru  
3rd Author's Affiliation University of Tokyo (Univ. of Tokyo)
4th Author's Name Shinji Miyano  
4th Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
5th Author's Name Ken Takeuchi  
5th Author's Affiliation University of Tokyo (Univ. of Tokyo)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2011-04-19 11:45:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2011-13 
Volume (vol) vol.111 
Number (no) no.6 
Page pp.71-76 
#Pages 6 
Date of Issue 2011-04-11 (ICD) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan