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Paper Abstract and Keywords
Presentation 2011-04-19 16:15
Analyses on Co-relation between Low and High Resistance States in ReRAM Consisting of Binary-Transition-Metal-Oxides
Hayato Tanaka (Tottori Univ), Kentaro Kinoshita, Satoru Kishida (Tottori Univ./TEDREC) ICD2011-20
Abstract (in Japanese) (See Japanese page) 
(in English) Resistive Random Access Memory (ReRAM) is attracting attention as a non-volatile memory for the next generation. The control of reset current is crucial from the standpoint of a practical use, where reset means resistive switching from low to high resistance states. It was reported that the reset current could be decreased by decreasing the compliance current which was imposed for the set process, where set means resistive switching from high to low resistance states. However, even if compliance current is kept at a fixed value, reset current shows the dispersion to some degree. In this study, it was suggested that dispersion of reset current originated in the dispersion of set voltage. A model which explains the dispersion was proposed based on the size dependence of the set voltage and its dispersion.
Keyword (in Japanese) (See Japanese page) 
(in English) ReRAM / NiO / breakdown / oxygen defec / dispersion / size dependence / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 6, ICD2011-20, pp. 111-116, April 2011.
Paper # ICD2011-20 
Date of Issue 2011-04-11 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2011-20

Conference Information
Committee ICD  
Conference Date 2011-04-18 - 2011-04-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Kobe University Takigawa Memorial Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2011-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analyses on Co-relation between Low and High Resistance States in ReRAM Consisting of Binary-Transition-Metal-Oxides 
Sub Title (in English)  
Keyword(1) ReRAM  
Keyword(2) NiO  
Keyword(3) breakdown  
Keyword(4) oxygen defec  
Keyword(5) dispersion  
Keyword(6) size dependence  
Keyword(7)  
Keyword(8)  
1st Author's Name Hayato Tanaka  
1st Author's Affiliation Tottori University (Tottori Univ)
2nd Author's Name Kentaro Kinoshita  
2nd Author's Affiliation Tottori University/ Tottori Univ. Electronic Display Research Center (Tottori Univ./TEDREC)
3rd Author's Name Satoru Kishida  
3rd Author's Affiliation Tottori University/ Tottori Univ. Electronic Display Research Center (Tottori Univ./TEDREC)
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Speaker Author-1 
Date Time 2011-04-19 16:15:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2011-20 
Volume (vol) vol.111 
Number (no) no.6 
Page pp.111-116 
#Pages 6 
Date of Issue 2011-04-11 (ICD) 

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