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Paper Abstract and Keywords
Presentation 2011-04-19 14:25
Design of Program-voltage(20V) Booster and TSV for High Speed and Low Power 3-D Solid State Drive System
Teruyoshi Hatanaka, Koh Johguchi, Koichi Ishida, Tadashi Yasufuku, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi (Univ. of Tokyo) ICD2011-16
Abstract (in Japanese) (See Japanese page) 
(in English) A design of high speed and low power high-voltage generator system that includes a program-voltage (20V) booster and TSV is proposed. The number of NAND flash channel is detected by a NAND flash channel number detector. Based on the detected NAND flash channel number, the switching clock of the booster is dynamically optimized. The SSD write speed increases by 60% and the fastest ever 4.2Gbps 3D-SSD is realized. The energy consumption of the booster decreases by 32%. From the simulation results, Cu-TSV technology can realize the proposed 3D-SSD with 24 NAND flash memory chips.
Keyword (in Japanese) (See Japanese page) 
(in English) Solid-State Drive / NAND flash memory / Boost converter / TSV / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 6, ICD2011-16, pp. 87-92, April 2011.
Paper # ICD2011-16 
Date of Issue 2011-04-11 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2011-16

Conference Information
Committee ICD  
Conference Date 2011-04-18 - 2011-04-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Kobe University Takigawa Memorial Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2011-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Design of Program-voltage(20V) Booster and TSV for High Speed and Low Power 3-D Solid State Drive System 
Sub Title (in English)  
Keyword(1) Solid-State Drive  
Keyword(2) NAND flash memory  
Keyword(3) Boost converter  
Keyword(4) TSV  
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Keyword(6)  
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1st Author's Name Teruyoshi Hatanaka  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Koh Johguchi  
2nd Author's Affiliation University of Tokyo (Univ. of Tokyo)
3rd Author's Name Koichi Ishida  
3rd Author's Affiliation University of Tokyo (Univ. of Tokyo)
4th Author's Name Tadashi Yasufuku  
4th Author's Affiliation University of Tokyo (Univ. of Tokyo)
5th Author's Name Makoto Takamiya  
5th Author's Affiliation University of Tokyo (Univ. of Tokyo)
6th Author's Name Takayasu Sakurai  
6th Author's Affiliation University of Tokyo (Univ. of Tokyo)
7th Author's Name Ken Takeuchi  
7th Author's Affiliation University of Tokyo (Univ. of Tokyo)
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Speaker Author-1 
Date Time 2011-04-19 14:25:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2011-16 
Volume (vol) vol.111 
Number (no) no.6 
Page pp.87-92 
#Pages 6 
Date of Issue 2011-04-11 (ICD) 

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