Paper Abstract and Keywords |
Presentation |
2011-05-19 13:25
Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Takuya Tabata, Ji-Hyun Paek, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2011-9 CPM2011-16 SDM2011-22 Link to ES Tech. Rep. Archives: ED2011-9 CPM2011-16 SDM2011-22 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaN nanowires (NWs) are expected to have a good property with visible long wavelength range. In this study, we attempted to grow InGaN NWs on a (111)Si substrate by RF-MBE, and the growth temperature and In flux ratio dependence of the crystalline and optical properties were investigated. At the fixed growth temperature, photoluminescence (PL) peak wavelength in InGaN NWs shifted to long wavelength side with increasing In composition. As growth temperature increased, PL intensity increased with decrease in PL peak wavelength. This result suggests that In is more easily desorbed with increasing growth temperature. We also estimated that an internal quantum efficiency (IQE) was below 18%. This unfavorable IQE is considered to be mainly due to stacking faults observed in STEM images. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
nanowire / InGaN / RF-MBE / Silicon substrate / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 44, ED2011-9, pp. 45-48, May 2011. |
Paper # |
ED2011-9 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2011-9 CPM2011-16 SDM2011-22 Link to ES Tech. Rep. Archives: ED2011-9 CPM2011-16 SDM2011-22 |
Conference Information |
Committee |
CPM SDM ED |
Conference Date |
2011-05-19 - 2011-05-20 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Univ. (VBL) |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2011-05-CPM-SDM-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Growth of InGaN nanowires on a (111)Si substrate by RF-MBE |
Sub Title (in English) |
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Keyword(1) |
nanowire |
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InGaN |
Keyword(3) |
RF-MBE |
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Silicon substrate |
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1st Author's Name |
Takuya Tabata |
1st Author's Affiliation |
Nagoya University (Nagoya Univ.) |
2nd Author's Name |
Ji-Hyun Paek |
2nd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
3rd Author's Name |
Yoshio Honda |
3rd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
4th Author's Name |
Masahito Yamaguchi |
4th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
5th Author's Name |
Hiroshi Amano |
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Nagoya University (Nagoya Univ.) |
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Speaker |
Author-1 |
Date Time |
2011-05-19 13:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2011-9, CPM2011-16, SDM2011-22 |
Volume (vol) |
vol.111 |
Number (no) |
no.44(ED), no.45(CPM), no.46(SDM) |
Page |
pp.45-48 |
#Pages |
4 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
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