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Paper Abstract and Keywords
Presentation 2011-05-19 13:50
Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate
Keisuke Kumagai, Kohei Shoji, Tsuyoshi Kawai, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ.Tech.) ED2011-10 CPM2011-17 SDM2011-23
Abstract (in Japanese) (See Japanese page) 
(in English) An AlP-based dilute nitride is one of the candidates for the cladding layer of laser structure in a Si-based optoelectronic integrated circuits (OEIC). In order to design the optical confinement structure, growth properties and optical constants of AlGaPN have been investigated. Nitrogen incorporation efficiency is increased by adding Al contents, but shows small effect of the growth temperatures. A high quality AlGaPN which can be lattice matched to Si obtained at the growth temperature of 600 °C. The refractive indexes of AlGaPN with the N concentration of a few % are almost the same an AlGaP. Finally AlPN/GaPN DBR is fabricated.
Keyword (in Japanese) (See Japanese page) 
(in English) OEIC / III-V-N alloys / GaPN / AlPN / Optical confinement structure / DBR / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 44, ED2011-10, pp. 49-54, May 2011.
Paper # ED2011-10 
Date of Issue 2011-05-12 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-10 CPM2011-17 SDM2011-23

Conference Information
Committee CPM SDM ED  
Conference Date 2011-05-19 - 2011-05-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. (VBL) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2011-05-CPM-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate 
Sub Title (in English)  
Keyword(1) OEIC  
Keyword(2) III-V-N alloys  
Keyword(3) GaPN  
Keyword(4) AlPN  
Keyword(5) Optical confinement structure  
Keyword(6) DBR  
Keyword(7)  
Keyword(8)  
1st Author's Name Keisuke Kumagai  
1st Author's Affiliation Toyohashi University of Technology (Toyohashi Univ.Tech.)
2nd Author's Name Kohei Shoji  
2nd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ.Tech.)
3rd Author's Name Tsuyoshi Kawai  
3rd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ.Tech.)
4th Author's Name Keisuke Yamane  
4th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ.Tech.)
5th Author's Name Hiroto Sekiguchi  
5th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ.Tech.)
6th Author's Name Hiroshi Okada  
6th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ.Tech.)
7th Author's Name Akihiro Wakahara  
7th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ.Tech.)
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Speaker Author-1 
Date Time 2011-05-19 13:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-10, CPM2011-17, SDM2011-23 
Volume (vol) vol.111 
Number (no) no.44(ED), no.45(CPM), no.46(SDM) 
Page pp.49-54 
#Pages 6 
Date of Issue 2011-05-12 (ED, CPM, SDM) 

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