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Paper Abstract and Keywords
Presentation 2011-05-20 16:40
Current collapse in GaN-based HFETs -- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate --
Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47
Abstract (in Japanese) (See Japanese page) 
(in English) We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing a high Vth and a small current collapse than c-plane HFETs. We also measured current collapse in normally off mode AlGaN/GaN JHFETs with a p-GaN gate. The large current collapse was observed in unpassivated sample, because AlGaN barrier of JHFETs was exposed to air by dry etching. On the other hand current collapse in the SiNx-passivated JHFETs is small and almost the same as that in as-grown HFETs.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN / HFETs / current collapse / non-polar / normally-off / GaN substrate / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 44, ED2011-34, pp. 175-178, May 2011.
Paper # ED2011-34 
Date of Issue 2011-05-12 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-34 CPM2011-41 SDM2011-47

Conference Information
Committee CPM SDM ED  
Conference Date 2011-05-19 - 2011-05-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. (VBL) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2011-05-CPM-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Current collapse in GaN-based HFETs 
Sub Title (in English) HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate 
Keyword(1) AlGaN/GaN  
Keyword(2) HFETs  
Keyword(3) current collapse  
Keyword(4) non-polar  
Keyword(5) normally-off  
Keyword(6) GaN substrate  
Keyword(7)  
Keyword(8)  
1st Author's Name Takayuki Sugiyama  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Yoshio Honda  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Masahito Yamaguchi  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Hiroshi Amano  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Yasuhiro Isobe  
5th Author's Affiliation Meijo University (Meijo Univ.)
6th Author's Name Yoshinori Oshimura  
6th Author's Affiliation Meijo University (Meijo Univ.)
7th Author's Name Motoaki Iwaya  
7th Author's Affiliation Meijo University (Meijo Univ.)
8th Author's Name Tetsuya Takeuchi  
8th Author's Affiliation Meijo University (Meijo Univ.)
9th Author's Name Satoshi Kamiyama  
9th Author's Affiliation Meijo University (Meijo Univ.)
10th Author's Name Isamu Akasaki  
10th Author's Affiliation Meijo University (Meijo Univ.)
11th Author's Name Mamoru Imade  
11th Author's Affiliation Osaka University (Osaka Univ.)
12th Author's Name Yasuo Kitaoka  
12th Author's Affiliation Osaka University (Osaka Univ.)
13th Author's Name Yusuke Mori  
13th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2011-05-20 16:40:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-34, CPM2011-41, SDM2011-47 
Volume (vol) vol.111 
Number (no) no.44(ED), no.45(CPM), no.46(SDM) 
Page pp.175-178 
#Pages 4 
Date of Issue 2011-05-12 (ED, CPM, SDM) 

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