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Paper Abstract and Keywords
Presentation 2011-05-20 09:25
Current path control with Nitride semiconductor-based tunnel junction
Kouji Yamashita, Mitsuru Kaga, Kouta Yagi (Meijo Univ.), Atsushi Suzuki (EL-SEED Corp.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-20 CPM2011-27 SDM2011-33
Abstract (in Japanese) (See Japanese page) 
(in English) Current path control in nitride semiconductor-based devices with tunnel junctions have been investigated along the following two aspects. First, LEDs with tunnel junctions and top n-GaN layers for current spreading were fabricated. Light extraction was improved 1.4 times compared to that of standard LEDs with semi-transparent electrodes. This indicates that the currents were sufficiently spreading at the top n-GaN layers and no light was absorbed at the electrodes. Next, current density distribution and device resistance were estimated in nitride-based vertical cavity surface emitting lasers with the tunnel junctions by finite element method. A reasonably low resistance, 200Ω, was obtained in a suitable device structure, implying potential cw operations at room temperature.
Keyword (in Japanese) (See Japanese page) 
(in English) nitride semiconductor / current path control / tunnel junction / surface-emitting laser / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 45, CPM2011-27, pp. 99-104, May 2011.
Paper # CPM2011-27 
Date of Issue 2011-05-12 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-20 CPM2011-27 SDM2011-33

Conference Information
Committee CPM SDM ED  
Conference Date 2011-05-19 - 2011-05-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. (VBL) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2011-05-CPM-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Current path control with Nitride semiconductor-based tunnel junction 
Sub Title (in English)  
Keyword(1) nitride semiconductor  
Keyword(2) current path control  
Keyword(3) tunnel junction  
Keyword(4) surface-emitting laser  
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1st Author's Name Kouji Yamashita  
1st Author's Affiliation Meijo University (Meijo Univ.)
2nd Author's Name Mitsuru Kaga  
2nd Author's Affiliation Meijo University (Meijo Univ.)
3rd Author's Name Kouta Yagi  
3rd Author's Affiliation Meijo University (Meijo Univ.)
4th Author's Name Atsushi Suzuki  
4th Author's Affiliation EL-SEED Corporation (EL-SEED Corp.)
5th Author's Name Motoaki Iwaya  
5th Author's Affiliation Meijo University (Meijo Univ.)
6th Author's Name Tetsuya Takeuchi  
6th Author's Affiliation Meijo University (Meijo Univ.)
7th Author's Name Satoshi Kamiyama  
7th Author's Affiliation Meijo University/EL-SEED Corp (Meijo Univ.)
8th Author's Name Isamu Akasaki  
8th Author's Affiliation Meijo University/Nagoya University (Meijo Univ./Nagoya Univ.)
9th Author's Name Hiroshi Amano  
9th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2011-05-20 09:25:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # ED2011-20, CPM2011-27, SDM2011-33 
Volume (vol) vol.111 
Number (no) no.44(ED), no.45(CPM), no.46(SDM) 
Page pp.99-104 
#Pages 6 
Date of Issue 2011-05-12 (ED, CPM, SDM) 

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