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Paper Abstract and Keywords
Presentation 2011-07-04 10:40
Characterization of initial oxidation process on high-index silicon surfaces by real-time photoemission spectroscopy
Shinya Ohno, Kei Inoue, Masahiro Morimoto, Sadanori Arae, Hiroaki Toyoshima (Yokohama Nat'l Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shoichi Ogata (Yokohama Nat'l Univ.), Tetsuji Yasuda (AIST), Masatoshi Tanaka (Yokohama Nat'l Univ.) SDM2011-54
Abstract (in Japanese) (See Japanese page) 
(in English) The initial oxidation on high-index silicon surfaces with (113) and (120) orientations has been investigated by real-time X-ray photoemission spectroscopy. The time evolutions of the Sin+ (n=1-4) components in the Si 2p spectrum indicate that the Si2+ state is suppressed on high-index surfaces compared with Si(001). The O 1s state consists of two components, a low-binding-energy component (LBC) and a high-binding-energy component (HBC). It is suggested that the O atom in strained Si-O-Si contributes to the LBC component.
Keyword (in Japanese) (See Japanese page) 
(in English) Si surface / oxidation / real-time monitoring / XPS / synchrotron radiation / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 114, SDM2011-54, pp. 23-27, July 2011.
Paper # SDM2011-54 
Date of Issue 2011-06-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2011-07-04 - 2011-07-04 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2011-07-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of initial oxidation process on high-index silicon surfaces by real-time photoemission spectroscopy 
Sub Title (in English)  
Keyword(1) Si surface  
Keyword(2) oxidation  
Keyword(3) real-time monitoring  
Keyword(4) XPS  
Keyword(5) synchrotron radiation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shinya Ohno  
1st Author's Affiliation Yokohama National University (Yokohama Nat'l Univ.)
2nd Author's Name Kei Inoue  
2nd Author's Affiliation Yokohama National University (Yokohama Nat'l Univ.)
3rd Author's Name Masahiro Morimoto  
3rd Author's Affiliation Yokohama National University (Yokohama Nat'l Univ.)
4th Author's Name Sadanori Arae  
4th Author's Affiliation Yokohama National University (Yokohama Nat'l Univ.)
5th Author's Name Hiroaki Toyoshima  
5th Author's Affiliation Yokohama National University (Yokohama Nat'l Univ.)
6th Author's Name Akitaka Yoshigoe  
6th Author's Affiliation Japan Atomic Energy Agency (JAEA)
7th Author's Name Yuden Teraoka  
7th Author's Affiliation Japan Atomic Energy Agency (JAEA)
8th Author's Name Shoichi Ogata  
8th Author's Affiliation Yokohama National University (Yokohama Nat'l Univ.)
9th Author's Name Tetsuji Yasuda  
9th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
10th Author's Name Masatoshi Tanaka  
10th Author's Affiliation Yokohama National University (Yokohama Nat'l Univ.)
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Speaker Author-1 
Date Time 2011-07-04 10:40:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2011-54 
Volume (vol) vol.111 
Number (no) no.114 
Page pp.23-27 
#Pages 5 
Date of Issue 2011-06-27 (SDM) 

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