Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2011-07-04 09:00
High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2011-50
Abstract (in Japanese) (See Japanese page) 
(in English) This paper reports our experimental study for further EOT scaling with small interface state density based on controlling direct contact La-silicate/Si interface. The interface state density of 1.6 x 1011 cm-2eV-1 can be achieved by annealing at 800 oC for 30min in forming gas while significant increase in EOT has been also observed. Increase in EOT caused by high temperature annealing has been drastically inhibited by Metal Inserted Poly-Si (MIPS) stacks with high quality interface. The effective electron mobility of 155 cm2/Vsec at 1MV/cm with an EOT of 0.62 nm has been achieved in direct contact La-silicate/Si structure by combination of MIPS stacks with high temperature annealing.
Keyword (in Japanese) (See Japanese page) 
(in English) EOT / high-k / rare earth oxide / silicate / interfacial property / effective mobility / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 114, SDM2011-50, pp. 1-5, July 2011.
Paper # SDM2011-50 
Date of Issue 2011-06-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-50

Conference Information
Committee SDM  
Conference Date 2011-07-04 - 2011-07-04 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2011-07-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT 
Sub Title (in English)  
Keyword(1) EOT  
Keyword(2) high-k  
Keyword(3) rare earth oxide  
Keyword(4) silicate  
Keyword(5) interfacial property  
Keyword(6) effective mobility  
Keyword(7)  
Keyword(8)  
1st Author's Name Takamasa Kawanago  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
2nd Author's Name Kuniyuki Kakushima  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
3rd Author's Name Parhat Ahmet  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
4th Author's Name Kazuo Tsutsui  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
5th Author's Name Akira Nishiyama  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
6th Author's Name Nobuyuki Sugii  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
7th Author's Name Kenji Natori  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
8th Author's Name Takeo Hattori  
8th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
9th Author's Name Hiroshi Iwai  
9th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2011-07-04 09:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2011-50 
Volume (vol) vol.111 
Number (no) no.114 
Page pp.1-5 
#Pages 5 
Date of Issue 2011-06-27 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan